Herein, we report the fabrication of high-performance transparent quantum-dot light-emitting diodes (Tr-QLEDs) with ZnO/ZnMgO inorganic double electron-transport layers (ETLs). The ETLs effectively suppress the excess electron injection and facilitate charge balance in the Tr-QLEDs. The thick ETLs as buffer layers can also withstand the plasma-induced damage during the indium tin oxide sputtering. These factors collectively contribute to the development of Tr-QLEDs with improved performance. As a result, our Tr-QLEDs with double ETLs exhibited a high transmittance of 82% at 550 nm and a record external quantum efficiency of 11.8%, which is 1.27 times higher than that of the devices with pure ZnO ETL. These results indicate that the developed ZnO/ZnMgO inorganic double ETLs could offer promising solutions for realizing high-efficiency Tr-QLEDs for next-generation display devices.

中文翻译：

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基于无机双电子传输层的高效透明量子点发光二极管

在此，我们报告了具有 ZnO/ZnMgO 无机双电子传输层 (ETL) 的高性能透明量子点发光二极管 (Tr-QLED) 的制造。ETL 有效地抑制了过量电子注入并促进了 Tr-QLED 中的电荷平衡。作为缓冲层的厚 ETL 还可以承受氧化铟锡溅射过程中等离子体引起的损伤。这些因素共同促进了具有改进性能的 Tr-QLED 的开发。因此，我们具有双 ETL 的 Tr-QLED 在 550 nm 处表现出 82% 的高透光率和 11.8% 的外量子效率，是具有纯 ZnO ETL 的器件的 1.27 倍。