Decoupling Radiative and Auger Processes in Semiconductor Nanocrystals by Shape Engineering,The Journal of Physical Chemistry Letters

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Decoupling Radiative and Auger Processes in Semiconductor Nanocrystals by Shape Engineering
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2021-09-15 , DOI: 10.1021/acs.jpclett.1c02300
Yang Zhou ₁ , Marco Califano _{1,

2}

Affiliation

One of the most challenging aspects of semiconductor nanotechnology is the presence of extremely efficient nonradiative decay pathways (known as Auger processes) that hinder any attempt at creating population inversion and obtaining gain in nanocrystals. What is even more frustrating is that, in most cases, the strategies adopted to slow down Auger in these nanostructures also lead to a comparable increase in the radiative recombination times, so that there is no overall improvement from the point of view of their applicability as emissive media. Here we present a comprehensive theoretical characterization of CdTe tetrapods and show that in these versatile nanostructures it is possible to achieve a complete decoupling between radiative and Auger processes, where the latter can be strongly suppressed compared to spherical structures, by careful shape engineering, without affecting the efficiency of radiative recombination.

中文翻译：

通过形状工程解耦半导体纳米晶体中的辐射和俄歇过程

半导体纳米技术最具挑战性的方面之一是存在极其有效的非辐射衰变途径（称为俄歇过程），它阻碍了任何在纳米晶体中产生粒子数反转和获得增益的尝试。更令人沮丧的是，在大多数情况下，在这些纳米结构中减缓俄歇的策略也会导致辐射复合时间的类似增加，因此从它们的适用性的角度来看并没有整体改进发光媒体。在这里，我们展示了 CdTe 四足体的综合理论表征，并表明在这些多功能纳米结构中，可以实现辐射和俄歇过程之间的完全解耦，与球形结构相比，后者可以被强烈抑制，

更新日期：2021-09-23

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