Analysis of the Effect of Cusp-Shaped Magnetic Fields on Heat, Mass, and Oxygen Transfer Using a Coupled 2D/3D Global Model,Crystal Research and Technology

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Analysis of the Effect of Cusp-Shaped Magnetic Fields on Heat, Mass, and Oxygen Transfer Using a Coupled 2D/3D Global Model
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2021-09-16 , DOI: 10.1002/crat.202100092
Koichi Kakimoto ₁ , Xin Liu ₁ , Satoshi Nakano ₁

Affiliation

The recent development of power devices requires silicon wafers in the radial direction as well as in the depth direction in a low oxygen concentration. Magnetic fields such as transverse or cusp-shaped magnetic fields are then applied to the silicon melt to reduce the oxygen concentration in the crystal, especially those 300 mm in diameter or larger. Several studies reported calculated results of reduced oxygen concentration in the melt with cusp-shaped magnetic fields. However, few studies have reported on the 3D transfer processes of oxygen in the melt. This paper reports on the transfer mechanism of oxygen in silicon melts with 300-mm-diameter crystals under cusp-shaped magnetic fields during the growth of silicon crystals via the Czochralski method. Using in-house software with a coupled 2D/3D global model, this study examines the effects of the flow fields in the melt on heat, mass, and oxygen transfer as a function of the relative position between the zero-Gauss plane and the melt.

中文翻译：

使用耦合的 2D/3D 全局模型分析尖点形磁场对热、质量和氧传递的影响

近来功率器件的发展需要在径向和深度方向上以低氧浓度的硅晶片。然后向硅熔体施加磁场，例如横向或尖头形磁场，以降低晶体中的氧浓度，尤其是那些直径为 300 毫米或更大的晶体。几项研究报告了使用尖头形磁场降低熔体中氧浓度的计算结果。然而，很少有研究报道氧在熔体中的 3D 转移过程。本文报道了在通过 Czochralski 法生长硅晶体过程中，在尖头形磁场下，直径为 300 mm 晶体的硅熔体中氧的转移机制。使用带有耦合 2D/3D 全局模型的内部软件，

更新日期：2021-09-16

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