Solution-processed co-doped indium oxide (In₂O₃) have broad application prospects in the display industry. In this paper, zirconium-aluminium co-doped indium oxide (In_xZr_yAl_1-x-yO) thin films and thin film transistors (TFTs) are prepared by the solution method. Doping ratio of Zr-Al is 1:0, 2:1, 1:1, 1:2 and 0:1, respectively, and the total atomic ratio of Zr-Al doping is 10 at.%. A novel nondestructive method, microwave photoconductivity decay (µ-PCD) is used to evaluate the quality of thin films by simply measuring their response under laser irradiation. The result shows that doping Zr-Al can reduce the defects in In₂O₃ thin films effectively. The addition of Zr can effectively reduce oxygen vacancies, and the addition of Al can inhibit the crystallization of In₂O₃ thin films. The optimal In_xZr_yAl_1-x-yO thin film with minimum defects is obtained with doping ratio of Zr:Al = 2:1. The roughness of thin films is below 0.37 nm, and possess exceptional transmittance (>95%) in the visible range. The optimized TFT exhibits mobility of 2.3 cm²µV⁻¹µs⁻¹, an on/off current ratio of 2.0 × 10⁴, a threshold voltage of 2.29 V and a subthreshold swing of 1.61 Vµdec⁻¹ with doping ratio of Zr:Al = 2:1.

溶液加工的共掺杂氧化铟（In₂O₃）在显示行业具有广阔的应用前景。本文采用锆铝共掺杂氧化铟(In _x Zr _y Al _1-xyO) 通过溶液法制备薄膜和薄膜晶体管 (TFT)。Zr-Al的掺杂比分别为1:0、2:1、1:1、1:2和0:1，Zr-Al掺杂的总原子比为10at.%。一种新型无损方法，微波光电导率衰减 (μ-PCD) 用于通过简单地测量激光照射下的响应来评估薄膜的质量。结果表明，掺杂Zr-Al可以有效地减少In₂O₃薄膜中的缺陷。Zr的加入可以有效减少氧空位，Al的加入可以抑制In₂O₃薄膜的结晶。最佳的 In _x Zr _y Al _1-xy以Zr:Al = 2:1 的掺杂比获得具有最少缺陷的O 薄膜。薄膜的粗糙度低于 0.37 nm，在可见光范围内具有出色的透射率 (>95%)。优化后的 TFT 具有 2.3 cm ² µV ^-1 µs ^{-1 的}迁移率、2.0 × 10 ⁴的开/关电流比、2.29 V 的阈值电压和 1.61 Vµdec ^-1的亚阈值摆幅以及 Zr:Al 掺杂比= 2:1。