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Low-Cost and Large-Area Hybrid X-Ray Detectors Combining Direct Perovskite Semiconductor and Indirect Scintillator
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2021-09-15 , DOI: 10.1002/adfm.202107843 Weijun Li 1 , Lulu Liu 1 , Mingrui Tan 1 , Yuhong He 1 , Chunjie Guo 2 , Huimao Zhang 2 , Haotong Wei 1, 3 , Bai Yang 1, 3
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2021-09-15 , DOI: 10.1002/adfm.202107843 Weijun Li 1 , Lulu Liu 1 , Mingrui Tan 1 , Yuhong He 1 , Chunjie Guo 2 , Huimao Zhang 2 , Haotong Wei 1, 3 , Bai Yang 1, 3
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Both semiconductors and scintillators have their own advantages in direct and indirect X-ray detection, respectively. However, they are also limited by their intrinsic properties and detection mechanisms. Here, a low-cost and large-area flat X-ray detector is reported by combining a cesium silver bismuth bromide (Cs2AgBiBr6) perovskite semiconductor with a ethylenebis-triphenylphosphonium manganese (II) bromide ((C38H34P2)MnBr4) scintillator through fast tableting processes. Cs2AgBiBr6 and (C38H34P2)MnBr4 can attenuate the X-ray photons to induce charge carriers that are collected through the continuous Cs2AgBiBr6 grains. (C38H34P2)MnBr4 blocks the Cs2AgBiBr6 ions migration paths at the grain boundaries to reduce the device dark current/noise and improves the working stability. Most charges generated by (C38H34P2)MnBr4 are transferred to the adjacent Cs2AgBiBr6, and recombined charges radiate light through scintillation, which will be further absorbed by the surrounding Cs2AgBiBr6 perovskite, and further induce collectable charges for indirect X-ray detection, avoiding the unwanted light scattering, self-absorption, or afterglow effects of scintillators. The hybrid X-ray detector displays a high sensitivity of 114 µC Gyair−1 cm−2 to 120 keVp hard X-rays with a lowest detectable dose rate of 0.2 μGyair s−1, showing 75 times lower detection limit compared to (C38H34P2)MnBr4 scintillator, which provides a new path for X-ray flat-panel design.
中文翻译：
结合直接钙钛矿半导体和间接闪烁体的低成本和大面积混合 X 射线探测器
半导体和闪烁体在直接和间接 X 射线探测方面分别具有各自的优势。然而，它们也受到其内在特性和检测机制的限制。在这里，通过将铯银溴化铋 (Cs 2 AgBiBr 6 ) 钙钛矿半导体与亚乙基双-三苯基鏻锰 (II) 溴化 ((C 38 H 34 P 2 )MnBr 4 ) 闪烁体通过快速压片工艺。Cs 2 AgBiBr 6和 (C 38 H 34 P 2 )MnBr 4可以衰减 X 射线光子以诱导通过连续的 Cs 2 AgBiBr 6晶粒收集的电荷载流子。(C 38 H 34 P 2 )MnBr 4阻断晶界处的Cs 2 AgBiBr 6离子迁移路径，降低器件暗电流/噪声，提高工作稳定性。(C 38 H 34 P 2 )MnBr 4产生的大部分电荷转移到相邻的Cs 2 AgBiBr 6，再结合的电荷通过闪烁发光，被周围的Cs进一步吸收2 AgBiBr 6钙钛矿，并进一步诱导用于间接 X 射线检测的可收集电荷，避免了不需要的光散射、自吸收或闪烁体的余辉效应。混合 X 射线探测器显示出 114 µC Gy空气-1 cm -2至 120 keV p硬 X 射线的高灵敏度，最低可检测剂量率为 0.2 µGy空气s -1，显示检测限低 75 倍(C 38 H 34 P 2 )MnBr 4闪烁体，为X射线平板设计提供了新途径。
更新日期：2021-09-15
中文翻译：
结合直接钙钛矿半导体和间接闪烁体的低成本和大面积混合 X 射线探测器
半导体和闪烁体在直接和间接 X 射线探测方面分别具有各自的优势。然而，它们也受到其内在特性和检测机制的限制。在这里，通过将铯银溴化铋 (Cs 2 AgBiBr 6 ) 钙钛矿半导体与亚乙基双-三苯基鏻锰 (II) 溴化 ((C 38 H 34 P 2 )MnBr 4 ) 闪烁体通过快速压片工艺。Cs 2 AgBiBr 6和 (C 38 H 34 P 2 )MnBr 4可以衰减 X 射线光子以诱导通过连续的 Cs 2 AgBiBr 6晶粒收集的电荷载流子。(C 38 H 34 P 2 )MnBr 4阻断晶界处的Cs 2 AgBiBr 6离子迁移路径，降低器件暗电流/噪声，提高工作稳定性。(C 38 H 34 P 2 )MnBr 4产生的大部分电荷转移到相邻的Cs 2 AgBiBr 6，再结合的电荷通过闪烁发光，被周围的Cs进一步吸收2 AgBiBr 6钙钛矿，并进一步诱导用于间接 X 射线检测的可收集电荷，避免了不需要的光散射、自吸收或闪烁体的余辉效应。混合 X 射线探测器显示出 114 µC Gy空气-1 cm -2至 120 keV p硬 X 射线的高灵敏度，最低可检测剂量率为 0.2 µGy空气s -1，显示检测限低 75 倍(C 38 H 34 P 2 )MnBr 4闪烁体，为X射线平板设计提供了新途径。
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