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Distorted octahedral site occupation-induced high-efficiency broadband near-infrared emission in LiScGe2O6:Cr3+ phosphor
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2021-09-04 , DOI: 10.1039/d1tc03057d
X. H. Chen 1, 2 , E. H. Song 2 , Y. Y. Zhou 2 , F. Q. He 2 , J. Q. Yang 2 , Q. Y. Zhang 2
Affiliation  

The discovery of high-efficiency broadband near-infrared (NIR) emission phosphors for light-emitting diodes (pc-LEDs) is of importance for optoelectronic devices and their emerging applications. Herein, a highly efficient broadband NIR emission phosphor LiScGe2O6:Cr3+ peaking at 886 nm with a full width at half maximum (FWHM) of 160 nm (∼2230 cm−1) is developed via a distorted octahedral site occupation strategy. Upon 480 nm blue-light excitation, the optimal phosphor composition LiSc0.93Ge2O6:0.07Cr3+ presents an internal quantum efficiency (IQE) of 72.6% and high external quantum efficiency (EQE) of 39.9%. A NIR LED is fabricated based on this phosphor and a blue InGaN chip, which shows a maximum NIR output power of 407.3 mW at 300 mA driving current with a photoelectric conversion efficiency of ∼8.9%, suggesting its high promise for night-vision applications. This work provides a new strategy for achieving high-efficiency Cr3+-doped NIR emission phosphors.

中文翻译:

LiScGe2O6:Cr3+ 荧光粉中扭曲的八面体位点占据引起的高效宽带近红外发射

用于发光二极管 (pc-LED) 的高效宽带近红外 (NIR) 发射荧光粉的发现对于光电器件及其新兴应用具有重要意义。在此,通过畸变八面体位点占据策略开发了一种高效宽带 NIR 发射荧光粉 LiScGe 2 O 6 :Cr 3+ ,峰值为 886 nm,半峰全宽 (FWHM) 为 160 nm (∼2230 cm -1 ) . 在 480 nm 蓝光激发下,最佳荧光粉组成 LiSc 0.93 Ge 2 O 6 :0.07Cr 3+呈现出 72.6% 的内部量子效率 (IQE) 和 39.9% 的高外部量子效率 (EQE)。基于这种磷光体和蓝色 InGaN 芯片制造的 NIR LED,在 300 mA 驱动电流下显示出 407.3 mW 的最大 NIR 输出功率,光电转换效率约为 8.9%,表明其在夜视应用中具有很高的前景。这项工作为实现高效的 Cr 3+掺杂 NIR 发射荧光粉提供了一种新策略。
更新日期:2021-09-16
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