This study reports on the morphological, structural, and optical properties as well as photocatalytic activity of N–In₂O₃ films. The carbothermal reduction process was used to synthesized In₂O₃ films on Ni/Si substrates under atmospheric pressure, followed by annealing under ammonia flow for various durations. The effect of N-doping on the materials' properties was investigated using FE-SEM, EDX, HR-XRD, and UV–Vis. The narrowing of the bandgap from 3.09 eV for the un-doped to 2.95 eV for the sample with the highest N-concentration was observed. Photoelectrochemical study of In₂O₃ based electrodes shows enhancement in their photoanodic activity with increasing N-doping. The most efficient electrode generates 1.33 mA/cm² photocurrent density at 0.46 V vs. Ag/AgCl, about three times more than the intrinsic electrode, achieving an applied bias to photon conversation efficiency (ABPE) of 1.03% and an incident photon to current conversion efficiency (IPCE) of 33.80% at λ = 420 nm. The enhanced PEC performance could be attributed to the increased donor concentration in the electrodes due to N-doping, as revealed by Mott-Schottky analysis. The result demonstrates that N-doping of CVD synthesized In₂O₃ films could be an excellent way of improving their PEC performance.

本研究报告了 N-In ₂ O ₃薄膜的形态、结构和光学性质以及光催化活性。碳热还原工艺用于在常压下在 Ni/Si 衬底上合成 In ₂ O ₃薄膜，然后在氨流下退火不同时间。使用FE-SEM、EDX、HR-XRD和UV-Vis研究了N掺杂对材料性能的影响。观察到带隙从未掺杂的 3.09 eV 变窄到 N 浓度最高的样品的 2.95 eV。In ₂ O _{3 的}光电化学研究基电极的光阳极活性随着 N 掺杂的增加而增强。最有效的电极在 0.46 V 相对于 Ag/AgCl 时产生 1.33 mA/cm ²光电流密度，大约是本征电极的三倍，实现了 1.03% 的光子转换效率 (ABPE) 和入射光子对电流的施加偏压λ = 420 nm 时的转换效率 (IPCE) 为 33.80%。正如 Mott-Schottky 分析所揭示的那样，增强的 PEC 性能可能归因于 N 掺杂导致电极中供体浓度的增加。结果表明，CVD 合成的 In ₂ O ₃薄膜的N 掺杂可能是改善其 PEC 性能的极好方法。