Molybdenum disulfide (MoS₂) in two-dimensional (2D) transition metal dichalcogenides (TMDs) has attracted attention as a next-generation semiconductor material owing to its intriguing electrical, optical, and mechanical characteristics, which enable its applications in flexible display backplane thin-film transistors, photodetectors, and complementary metal oxide semiconductor (CMOS) digital circuits. However, MoS₂ films only have n-type operating characteristics, and p-type conduction in MoS₂ devices has rarely been reported owing to their strong n-type semiconducting property. Herein, we demonstrate the p-doping effects in poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO)-MoS₂ heterointerface. By simply coating PFO on the top of pre-fabricated MoS₂ field effect transistors (FETs), the proposed PFO-MoS₂ heterointerface devices could be implemented. A positive shift in the threshold voltage and reduction in the on-current were observed in the proposed PFO-MoS₂ heterointerface devices, which indicated ambipolar characteristics with p- and n-type charge transport behaviors. More importantly, the multicolor photosensing behaviors by red, green, and blue light with enhanced sensitivity of PFO-MoS₂ hetero-interfacial devices were enhanced.

二维 (2D) 过渡金属二硫属化物 (TMD) 中的二硫化钼 (MoS ₂ ) 作为下一代半导体材料，由于其有趣的电学、光学和机械特性而备受关注，这使其在柔性显示背板薄-薄膜晶体管、光电探测器和互补金属氧化物半导体 (CMOS) 数字电路。然而，MoS ₂薄膜仅具有n型工作特性，并且由于其强的n型半导体特性，在MoS ₂器件中的p型传导很少被报道。在此，我们展示了聚 (9,9-di-n-octylfluorenyl-2,7-diyl) (PFO)-MoS _{2 中}的 p 掺杂效应异质接口。通过在预制的 MoS ₂场效应晶体管 (FET)顶部简单地涂覆 PFO，可以实现所提出的 PFO-MoS ₂异质界面器件。在所提出的 PFO-MoS ₂异质界面器件中观察到阈值电压的正偏移和导通电流的降低，这表明具有 p 型和 n 型电荷传输行为的双极性特性。更重要的是，增强了PFO-MoS ₂异质界面器件对红光、绿光和蓝光的多色光敏行为的敏感性。