In₂O₃ nanowires (NWs) were successfully synthesized by electrospinning. The crystalline phase, microstructure, morphology, elemental composition, and BET surface area were analyzed XRD, SEM, TEM, XPS, and nitrogen adsorption. The characterization of the In₂O₃ NWs showed that In₂O₃ NWs were uniform thickness, structural integrity, and high purity. In subsequent gas-sensitive tests, the effects of PVP percentage, calcination temperature, calcination ramp-up rate, and calcination time on sensitive properties were analyzed. In particular, the In₂O₃ sensor showed a response of up to 37.9 (Ra/Rg) to 100 ppm acetone at an operating temperature of 200 °C and the response/recovery time is 1 s/7 s. The gas-sensitive mechanism of the In₂O₃ sensor was also analyzed in conjunction with the characterization results. Our study shows that the response of the In₂O₃ sensor is improved compared to the previously published sensors.

通过静电纺丝成功合成了In ₂ O ₃纳米线（NW）。通过XRD、SEM、TEM、XPS和氮吸附分析了晶相、微观结构、形貌、元素组成和BET表面积。In ₂ O ₃纳米线的表征表明，In ₂ O ₃纳米线具有均匀的厚度、结构完整性和高纯度。在随后的气敏试验中，分析了 PVP 百分比、煅烧温度、煅烧升温速率和煅烧时间对敏感性能的影响。特别是，In ₂ O ₃在 200 °C 的工作温度下，传感器对 100 ppm 丙酮的响应高达 37.9 (Ra/Rg)，响应/恢复时间为 1 秒/7 秒。还结合表征结果分析了 In ₂ O ₃传感器的气敏机制。我们的研究表明，与之前发布的传感器相比，In ₂ O ₃传感器的响应得到了改进。