In this paper, the occupancy of sidewall surface states having a clear signature in the performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi-classical Monte Carlo (MC) simulator in a wide temperature ($T$) range, from 100 to 300 K. Experimental $I$–$V$ curves show an unusual current decrease at low temperature attributed to surface trapping. The dependence on $T$ of the negative surface charge density $\sigma$ at the etched sidewalls of the SSDs is essential to explain the measurements. Two devices with different widths (80 and 150 nm) have been characterized and simulated in detail paying especial attention to the modeling of the surface states. At room temperature, MC simulations with a position-independent value of $\sigma$ are able to qualitatively reproduce the $I$–$V$ curves. However, a more complex approach is required to correctly replicate the values and shape of the DC experimental curves at low temperature, below 220 K. An algorithm where $\sigma$ depends not only on $T$ but also on the applied bias $V$ is proposed to successfully fit the current values at every bias point. The model is able to explain the physics of the unexpected dependence of the resistance with the channel width and the sign change in the bowing coefficient, the parameters that govern the detection capabilities of the diodes.

中文翻译：

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表面电荷对 GaN 非对称纳米通道影响的蒙特卡罗分析：偏置和温度依赖性

在本文中，使用半经典蒙特卡罗 (MC) 模拟器在宽温度下分析了在 AlGaN/GaN 基自开关二极管 (SSD) 性能中具有明显特征的侧壁表面状态的占有率 ($吨$) 范围，从 100 到 300 K。实验 $\mathrm{一世}$——$伏$曲线显示由于表面俘获导致的低温下异常的电流下降。的依赖$吨$ 负表面电荷密度 $\sigma$在 SSD 的蚀刻侧壁处的测量对于解释测量是必不可少的。已经详细表征和模拟了具有不同宽度（80 和 150 nm）的两种器件，特别注意表面状态的建模。在室温下，MC 模拟具有与位置无关的值$\sigma$ 能够定性地再现 $\mathrm{一世}$——$伏$曲线。然而，需要一种更复杂的方法来正确复制低温下直流实验曲线的值和形状，低于 220 K。一种算法，其中$\sigma$ 不仅取决于 $吨$ 但也适用于应用偏差 $伏$建议在每个偏置点成功拟合当前值。该模型能够解释电阻与沟道宽度和弯曲系数的符号变化的意外相关性，这些参数控制二极管的检测能力。