Measurements of conductance fluctuations in undoped hydrogenated amorphous germanium (a-Ge:H) find power spectra that vary with inverse frequency (1/f) that are characterized by non-Gaussian statistics. The non-Gaussian aspect of the 1/f noise is reflected in (1) histograms of the noise power per octave that are described by lognormal distributions, (2) power-law second spectra, and (3) strong correlations of the noise power in frequency-space. In contrast, measurements of current fluctuations in polycrystalline germanium thin films find 1/f noise with Gaussian statistics. These results are discussed in terms of a model of filamentary conduction, where the filament structure and conductance in a-Ge:H are modulated by hydrogen motion.

中文翻译：

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氢化非晶锗的电导波动

未掺杂氢化非晶锗 (a-Ge:H) 中电导波动的测量发现功率谱随反频率 (1/ f ) 变化，其特征在于非高斯统计。1/ f噪声的非高斯方面反映在 (1) 由对数正态分布描述的每倍频程噪声功率的直方图，(2) 幂律第二谱，以及 (3) 噪声功率的强相关性在频率空间。相比之下，多晶锗薄膜中电流波动的测量发现具有高斯统计的1/ f噪声。这些结果根据丝状传导模型进行讨论，其中 a-Ge:H 中的丝状结构和电导受氢运动的调节。