Electron traps generated during the reactive ion etching (RIE) process in n-type 4H-SiC are investigated using the deep-level transient spectroscopy technique and isothermal capacitance transient spectroscopy (ICTS) technique. Two electron traps of the Z_1/2 center ($E_{\mathrm{C}}-0.64\mathrm{eV}$) and the EH₃ center ($E_{\mathrm{C}}-0.74\mathrm{eV}$) are detected in the RIE-etched sample by ICTS measurement at 300 K. A method is proposed to determine the depth profiles of the electron traps that are localized near the etched surface, whereby a depth profile is extracted from the dependence of averaged trap density on the depletion layer width. An exponential distribution is assumed as the depth profile of the electron traps generated during the RIE process. The extracted depth profile was confirmed to be consistent with that determined by the double-correlation method. An appropriate function for the depth profile of carrier traps is assumed and the dependence of the averaged trap density on the depletion layer width is analyzed, which enables the extraction of a depth profile that has both higher depth resolution and higher resolution in the carrier trap density with the proposed method than that with the double-correlation method.

中文翻译：

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使用等温电容瞬态光谱表征的 n 型 4H-SiC 反应离子蚀刻过程中产生的电子陷阱的深度分布

使用深能级瞬态光谱技术和等温电容瞬态光谱 (ICTS) 技术研究了在 n 型 4H-SiC 中反应离子蚀刻 (RIE) 过程中产生的电子陷阱。Z _1/2中心的两个电子陷阱(${乙}_{\mathrm{C}}-0.64\mathrm{电动汽车}$) 和 EH ₃中心 (${乙}_{\mathrm{C}}-0.74\mathrm{电动汽车}$) 在 300 K 下通过 ICTS 测量在 RIE 蚀刻样品中检测到。提出了一种方法来确定位于蚀刻表面附近的电子陷阱的深度剖面，由此从平均陷阱密度的依赖性中提取深度剖面在耗尽层宽度上。指数分布被假定为在 RIE 过程中产生的电子陷阱的深度分布。确定提取的深度剖面与双相关法确定的深度剖面一致。假定载流子陷阱深度分布的适当函数，并分析平均陷阱密度对耗尽层宽度的依赖性，