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Tuning Surface States of Metal/Polymer Contacts Toward Highly Insulating Polymer-Based Dielectrics
ACS Applied Materials & Interfaces ( IF 9.5 ) Pub Date : 2021-09-14 , DOI: 10.1021/acsami.1c12854
Yifei Wang 1 , Shamima Nasreen 1 , Deepak Kamal 2 , Zongze Li 1, 3 , Chao Wu 1 , Jindong Huo 1 , Lihua Chen 2 , Rampi Ramprasad 2 , Yang Cao 1, 3
Affiliation  

Metal–polymer interface plays a crucial role in controlling the dielectric performance in all flexible electronics. Ideally, the formation of the Schottky barrier due to the large band offset of the electron affinity of the polymer over the work function of the electrode should sufficiently impede the charge injection. Arguably, however, such an injection barrier has hardly been indisputably verified in polymer–metal junctions due to the ever-existing surface states, which dramatically compromise the barrier thus leading to undesired high electrical conduction. Here, we demonstrate experimentally a clear negative correlation between the breakdown strength and the density of surface states in polymer dielectrics. The existence of surface states reduces the effective barrier height for charge injection, as further revealed by density functional theory calculations and photoinjection current measurements. Based on these findings, we present a surface engineering method to enhance the breakdown strength with the application of nanocoatings on polymer films to eliminate surface states. The density of surface states is reduced by 2 orders of magnitude when the polymer is coated with a layer of two-dimensional hexagonal boron nitride nanosheets, leading to about 100% enhancement of breakdown strength. This work reveals the critical role played by surface states on electrical breakdown and provides a versatile surface engineering strategy to curtail surface states, broadly applicable for all polymer dielectrics.

中文翻译:

调整金属/聚合物接触的表面状态以实现高度绝缘的聚合物基电介质

金属-聚合物界面在控制所有柔性电子产品的介电性能方面起着至关重要的作用。理想情况下,由于聚合物的电子亲和力超过电极功函数的大带偏移,肖特基势垒的形成应足以阻止电荷注入。然而,可以说,由于一直存在的表面状态,这种注入势垒在聚合物-金属结中几乎没有无可争议地得到证实,这极大地损害了势垒,从而导致了不希望的高导电性。在这里,我们通过实验证明了击穿强度与聚合物电介质中表面态密度之间的明显负相关。表面态的存在降低了电荷注入的有效势垒高度,密度泛函理论计算和光注入电流测量进一步揭示了这一点。基于这些发现,我们提出了一种表面工程方法,通过在聚合物薄膜上应用纳米涂层来消除表面状态,从而提高击穿强度。当聚合物涂有一层二维六方氮化硼纳米片时,表面态密度降低了两个数量级,导致击穿强度提高了约 100%。这项工作揭示了表面状态对电击穿的关键作用,并提供了一种通用的表面工程策略来减少表面状态,广泛适用于所有聚合物电介质。我们提出了一种表面工程方法,通过在聚合物薄膜上应用纳米涂层来消除表面状态,从而提高击穿强度。当聚合物涂有一层二维六方氮化硼纳米片时,表面态密度降低了两个数量级,导致击穿强度提高了约 100%。这项工作揭示了表面状态对电击穿的关键作用,并提供了一种通用的表面工程策略来减少表面状态,广泛适用于所有聚合物电介质。我们提出了一种表面工程方法,通过在聚合物薄膜上应用纳米涂层来消除表面状态,从而提高击穿强度。当聚合物涂有一层二维六方氮化硼纳米片时,表面态密度降低了两个数量级,导致击穿强度提高了约 100%。这项工作揭示了表面状态对电击穿的关键作用,并提供了一种通用的表面工程策略来减少表面状态,广泛适用于所有聚合物电介质。导致击穿强度提高约 100%。这项工作揭示了表面状态对电击穿的关键作用,并提供了一种通用的表面工程策略来减少表面状态,广泛适用于所有聚合物电介质。导致击穿强度提高约 100%。这项工作揭示了表面状态对电击穿的关键作用,并提供了一种通用的表面工程策略来减少表面状态,广泛适用于所有聚合物电介质。
更新日期:2021-09-29
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