The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor,Advanced Engineering Materials

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The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor
Advanced Engineering Materials ( IF 3.4 ) Pub Date : 2021-09-15 , DOI: 10.1002/adem.202100935
Songang Peng _{1,

2} , Zhi Jin ₁ , Dayong Zhang _{1,

2} , Jingyuan Shi ₁ , Jiebin Niu ₂ , Chaoyi Zhu ₁ , Yanhui Zhang ₃ , Guanghui Yu ₃

Affiliation

Herein, the effect of metal contact doping on the scaled graphene field effect transistor (GFET) is investigated. Different from the traditional semiconductors device, the drain current of GFET is not inversely proportional to the channel length (L_CH). The abnormal scaling behavior for drain current in GFETs can be attributed to the modification of channel resistance induced by the penetration of contact metal doping. In addition, the field-effect mobility (μ_EF) of long channel GFET trend to saturate with decreasing L_CH, which is consistent with the diffusive transport model. As the channel length is further scaled down, the μ_EF at first increases drastically and then decreases due to the enhanced effect of electrical property of graphene under the metal electrode as well as the contact resistance on the carrier transport of GFET. This study indicates that there will be a trade-off between scaled channel length and the best performance of GFET. Further efforts should be made to modulate the properties of graphene both in channel and contact region to improve the scaling behavior of GFET.

中文翻译：

金属接触掺杂对缩放石墨烯场效应晶体管的影响

在此，研究了金属接触掺杂对缩放石墨烯场效应晶体管 (GFET) 的影响。与传统半导体器件不同，GFET 的漏极电流与沟道长度（ L _CH ）不成反比。GFET 中漏极电流的异常缩放行为可归因于接触金属掺杂的渗透引起的沟道电阻的改变。此外，长沟道GFET的场效应迁移率( _μEF)随着L _CH的减小而趋于饱和，这与扩散传输模型一致。随着沟道长度的进一步缩小，μ _EF由于金属电极下石墨烯的电性能的增强以及接触电阻对GFET载流子传输的影响，首先急剧增加然后减少。这项研究表明，在按比例缩放的沟道长度和 GFET 的最佳性能之间会有一个折衷。应进一步努力调节石墨烯在沟道和接触区的特性，以改善 GFET 的缩放行为。

更新日期：2021-09-15

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