Synergistic Texturing and Bi/Sb-Te Antisite Doping Secure High Thermoelectric Performance in Bi0.5Sb1.5Te3-Based Thin Films,Advanced Energy Materials

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Synergistic Texturing and Bi/Sb-Te Antisite Doping Secure High Thermoelectric Performance in Bi0.5Sb1.5Te3-Based Thin Films
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2021-09-15 , DOI: 10.1002/aenm.202102578
Ming Tan ₁ , Xiao‐Lei Shi _{2,

3} , Wei‐Di Liu ₂ , Meng Li ₃ , Yaling Wang ₁ , Hui Li ₁ , Yuan Deng ₄ , Zhi‐Gang Chen _{2,

3}

Affiliation

Bi₂Te₃-based thin films are attracting increasing attention due to their considerable wearability and flexibility feature. However, the relatively low performance compared to their bulk counterparts limits their development and wider application. In this work, synergistic texturing and Bi/Sb-Te antisite doping are used to achieve a high room-temperature ZT of ≈1.5 in p-type Bi_0.5Sb_1.5Te₃ thin films by a magnetron sputtering method. Structural characterization confirms that carefully tuning the deposition temperature can strengthen the texture of as-prepared polycrystalline Bi_0.5Sb_1.5Te₃ thin films, leading to significantly enhanced carrier mobility and electrical conductivity. Simultaneously, rational engineering of the deposition temperature can induce antisite doping between Bi/Sb and Te, which can reduce the carrier concentration and make it closer to the optimized level. In turn, a high power factor of 45.3 µW cm⁻¹ K⁻² and a maximized ZT of ≈1.5 at room temperature are obtained. This high power factor and ZT are highly competitive to other state-of-the-art p-type thin-film-based thermoelectric materials, showing great potentials for practical applications.

中文翻译：

协同织构和 Bi/Sb-Te 反位掺杂确保 Bi0.5Sb1.5Te3 基薄膜的高热电性能

Bi ₂ Te ₃基薄膜由于其显着的耐磨性和柔韧性特征而引起越来越多的关注。然而，与散装同类产品相比，相对较低的性能限制了它们的发展和更广泛的应用。在这项工作中，协同织构和 Bi/Sb-Te 反位掺杂用于通过磁控溅射方法在 p 型 Bi _0.5 Sb _1.5 Te ₃薄膜中实现≈1.5的高室温ZT。结构表征证实，仔细调整沉积温度可以增强所制备多晶 Bi _0.5 Sb _1.5 Te ₃的织构薄膜，从而显着提高载流子迁移率和导电性。同时，对沉积温度进行合理设计，可以诱导Bi/Sb和Te之间的反位掺杂，从而降低载流子浓度，使其更接近优化水平。反过来，在室温下获得了 45.3 µW cm ^-1 K ^-2的高功率因数和≈1.5的最大ZT。这种高功率因数和ZT与其他最先进的 p 型薄膜基热电材料具有很强的竞争力，显示出巨大的实际应用潜力。

更新日期：2021-10-27

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