Ferroelectric multilayer films attract great attention for a wide variation of applications. The synergistic effect by combining different functional layers induces distinctive electrical properties. In this study, ferroelectric BaZr_0.2Ti_0.8O₃/PbZr_0.52Ti_0.48O₃/BaZr_0.2Ti_0.8O₃ (BZT/PZT/BZT) multilayer thin films are designed and fabricated by using the magnetron sputtering method, and a LaNiO3 (LNO) seed layer is introduced. The microstructures and electrical properties of the BZT/PZT/BZT films with and without the LNO seed layer are systematically studied. The results show that the BZT/PZT/BZT/LNO thin film exhibits much lower surface roughness and a preferred (100)-orientation growth, with the growth template and tensile stress provided by the LNO layer. Moreover, an enhanced dielectric constant, decreased dielectric loss, and improved ferroelectric properties are achieved in BZT/PZT/BZT/LNO thin films. This work reveals that the seed layer can play an important role in improving the microstructure and properties of ferroelectric multilayer films.

铁电多层膜在广泛的应用中引起了极大的关注。通过组合不同功能层的协同效应产生独特的电学特性。本研究中，铁电体 BaZr _0.2 Ti _0.8 O ₃ /PbZr _0.52 Ti _0.48 O ₃ /BaZr _0.2 Ti _0.8 O ₃(BZT/PZT/BZT) 多层薄膜采用磁控溅射方法设计和制造，并引入 LaNiO3 (LNO) 种子层。系统地研究了有和没有 LNO 种子层的 BZT/PZT/BZT 薄膜的微观结构和电性能。结果表明，BZT/PZT/BZT/LNO 薄膜表现出低得多的表面粗糙度和优选的 (100) 取向生长，生长模板和拉伸应力由 LNO 层提供。此外，在 BZT/PZT/BZT/LNO 薄膜中实现了增强的介电常数、降低的介电损耗和改善的铁电性能。这项工作表明，种子层可以在改善铁电多层膜的微观结构和性能方面发挥重要作用。