Kesterite quaternary material Cu₂ZnSnS₄, (CZTS)-based thin-film solar cells have attracted intensive attention owing to their earth-abundant nature, stable thermodynamic structure, and large potential for high power conversion efficiency (PCE) defined by their suitable optoelectronic properties. As a widely used thin film preparation method, pulsed laser deposition (PLD) has not been fully studied in CZTS thin-film solar cell. Herein, a promising route based on PLD from a quaternary target and post-sulphuration for CZTS thin film was achieved. Through systematical investigation and optimization of substrate temperature, laser pulse energy, and sulfurization temperature, the CZTS thin films showed single kesterite structure, high (112) orientation, and dense polycrystalline grains with controlled composition. The CZTS thin-film solar cell exhibited a record PCE of 6.62%, the highest reported value when using pulsed laser deposited and sulfurized process, due to its lower series resistance, reduced grain boundary effects, superior interface quality, and a suitable depletion width. This research offers a facile and robust preparation method for CZTS films with enhanced photovoltaic properties and increased efficiency.

黄铜矿四元材料 Cu ₂ ZnSnS ₄, (CZTS) 基薄膜太阳能电池由于其在地球上丰富的性质、稳定的热力学结构以及由其合适的光电特性定义的高功率转换效率 (PCE) 的巨大潜力而​​引起了广泛关注。作为一种广泛使用的薄膜制备方法，脉冲激光沉积（PLD）在 CZTS 薄膜太阳能电池中尚未得到充分研究。在此，实现了基于 PLD 从四元目标和 CZTS 薄膜后硫化的有前途的路线。通过对衬底温度、激光脉冲能量和硫化温度的系统研究和优化，CZTS 薄膜表现出单一的锌黄锡矿结构、高 (112) 取向和致密的多晶粒且成分可控。CZTS 薄膜太阳能电池的 PCE 达到创纪录的 6.62%，使用脉冲激光沉积和硫化工艺时的最高报告值，因为它具有较低的串联电阻、减少的晶界效应、优异的界面质量和合适的耗尽宽度。该研究为具有增强的光伏性能和更高的效率的 CZTS 薄膜提供了一种简便而可靠的制备方法。