A big challenge to improve the conversion efficiency of n-type solar cell is the recombination and electrical contacting of boron (B)-doped emitters in n-TOPCon solar cells. This work investigates the emitter dark saturation current density under the passivation layer (J_{0e, passivated}), the metallization-induced recombination current density under the metal contact (J_{0e, metal}), and the I–V parameters, including short-circuit current density (J_sc), open circuit voltage (V_oc), fill factor (FF) and efficiency (E_ff) as functions of the peak concentration (N_max) and junction depth of B-doped profile. We introduced the profile with the peak concentration of 1–1.5 × 10¹⁹ atoms/cm³ and a junction depth of 0.75–1.0 μm to improve the conversion efficiency of 23.4%. The results revealed that J_sc, implied V_oc (iV_oc) and the contact resistance (ρ_c) were negative correlated with the N_max and junction depth. However, J_{0e, passivated} had a positive correlation with the same. The results from ρ_c, J_0e along with the I–V showed the junction depth of emitter doping profiles need to exceed the corroded depth of Ag/Al paste to get a low ρ_c, meanwhile, a low J_0e should be ensured. The results suggested theB-selective emitters were developed with a low ρ_c and a low J_0e. After optimizing B-selective emitters and passivation processes, we obtained industry-grade TOPCon cells with E_ff, V_oc, J_sc, and FF as high as 23.7%, 709 mV, 40.8 mA/cm², and 82%, respectively. This optimized B-doped and simplified B-selective emitters processes can be commercially applied in photovoltaics.

提高 n 型太阳能电池转换效率的一大挑战是 n-TOPCon 太阳能电池中掺硼 (B) 发射极的复合和电接触。这项工作研究了钝化层下的发射极暗饱和电流密度（J _0e，钝化），金属接触下的金属化诱导复合电流密度（J _0e，金属），以及I – V参数，包括短路电流密度 ( J _sc )、开路电压 ( V _oc )、填充因子 (FF) 和效率 ( E _ff ) 作为峰值浓度 ( N _max ) 的函数) 和 B 掺杂剖面的结深度。我们引入了峰值浓度为 1–1.5 × 10 ¹⁹原子/cm ³和结深为 0.75–1.0 μm的轮廓，以提高 23.4% 的转换效率。结果表明，J _sc、隐含V _oc (i V _oc ) 和接触电阻( ρ _c ) 与N _max和结深度呈负相关。然而，J _0e，钝化与相同具有正相关。从结果ρ _Ç，Ĵ _0E与沿我-V表明发射极掺杂分布的结深度需要超过 Ag/Al 膏的腐蚀深度才能获得低ρ _c，同时应确保低J _0e。结果表明，B 选择性发射器是用低ρ _c和低J _{0e 开发的}。在优化B-selective发射器和钝化工艺后，我们获得了E _ff、V _oc、J _sc和FF 高达23.7%、709 mV、40.8 mA/cm ^{2 的}工业级TOPCon电池和 82%，分别为。这种优化的 B 掺杂和简化的 B 选择性发射器工艺可以商业应用在光伏领域。