Two-dimensional (2D) materials have been demonstrated to be promising candidates to design high performance photodetectors owing to their strong light–matter interaction. However, the performance of 2D material photodetectors is still unsatisfactory, such as slow response speed due to defects and vulnerable contact interface, which impede their rapid development in the field of optoelectronics. In this paper, we obtained the ideal and large photosensitive van der Waals Schottky interface by the laminating-flipping method. Hence, a fast response speed (<1 ms) and high detectivity (>10¹² Jones) are observed on the van der Waals Schottky junction photodiode. More importantly, benefiting from the flat Schottky interface (the roughness ∼0.6 nm), a sub-bandgap light response modulated by the Schottky barrier height (cut-off edge at 1050 nm) has been detected based on the large Au/MoSe₂ sensitive Schottky interface internal photoemission. As a result, a universal strategy for the sub-bandgap near-infrared van der Waals Schottky junction detector of 2D materials was obtained.

中文翻译：

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基于理想金属/二维材料范德瓦尔斯肖特基界面的内部光电发射高性能子带隙光电检测

二维（2D）材料由于其强的光-物质相互作用已被证明是设计高性能光电探测器的有希望的候选材料。然而，二维材料光电探测器的性能仍然不尽如人意，例如由于缺陷和脆弱的接触界面响应速度慢，阻碍了它们在光电子领域的快速发展。在本文中，我们通过层压翻转方法获得了理想的大光敏范德瓦尔斯肖特基界面。因此，响应速度快 (<1 ms) 和检测率高 (>10 ¹²Jones) 在范德瓦尔斯肖特基结光电二极管上观察到。更重要的是，受益于平坦的肖特基界面（粗糙度~0.6 nm），基于大的 Au/MoSe ₂敏感度检测到了由肖特基势垒高度（1050 nm 的截止边缘）调制的亚带隙光响应。肖特基界面内部光电发射。结果，获得了用于二维材料的亚带隙近红外范德华肖特基结探测器的通用策略。