The effect of the substrate temperature (Ts) on the growth of Cu_2-xTe films using the RF sputtering technique has been studied through a structural assessment of the different trigonal (space group P3m1) phases encountered in the range 100–350 °C. A new stoichiometric Cu₇Te₄ phase (δ′) with Z = 1 is proposed, and it is present in all the temperatures studied. Low-angle peaks (2θ < 20°) of Glancing Incidence X-ray Diffraction (GIXD) patterns are consistent with the formation of commensurate phases (forms α′) through variations in the c parameter whose value can be as large as 25.47 Å. The base modulation vector is the c parameter of the unit-cell of phase δ′ that, in this work, resulted in a value of 3.61 Å. The origin of the observed commensurate phases has been ascribed to an occupancy-wave modulation. Whereas at high temperatures (Ts > 250 °C), the major phase is δ' (Cu₇Te₄ or Cu_2-xTe with x = 0.25), the predominant phase, for Ts < 250 °C, is the commensurate superstructure 7C with higher [Cu]/[Te] ratio (x < 0.25). The transition between these two thermal regimes is stated at a temperature of about 250 °C. Maintaining a constant global composition, the devaluation of [Cu] in films, with the temperature above the transition range, is explained in terms of diffusion of copper downward the film and towards its edges.

通过对 100– 范围内遇到的不同三角（空间群P 3 m 1）相的结构评估，研究了衬底温度 (Ts) 对使用 RF 溅射技术生长的 Cu _2-x Te 薄膜的影响。350℃。提出了一种新的化学计量的 Cu ₇ Te ₄相 (δ')，其中 Z = 1，它存在于所有研究的温度中。掠射入射 X 射线衍射 (GIXD) 图案的低角度峰 (2θ < 20°) 与通过c参数变化形成的相称相（α' 形式）一致，其值可高达 25.47 Å。基本调制向量是cδ' 相晶胞的参数，在这项工作中，其值为 3.61 Å。观察到的相称相位的起源归因于占用波调制。而在高温下 (Ts > 250 °C)，主要相是 δ'（Cu ₇ Te ₄或 Cu _2-x Te，x = 0.25），主要相，对于 Ts < 250 °C，是相应的超结构7C 具有更高的 [Cu]/[Te] 比 (x < 0.25)。这两种热状态之间的转变是在大约 250 °C 的温度下进行的。保持恒定的全局组成，薄膜中 [Cu] 的贬值，温度高于转变范围，可以通过铜向下扩散到薄膜边缘来解释。