The effect of plasma excitation frequency on the performance of intrinsic hydrogenated amorphous silicon (a-Si:H) films and heterojunction solar cells by radio-frequency (RF, 13.56 MH_Z) and very-high-frequency (VHF, 40 MH_Z) plasma-enhanced chemical vapor deposition (PECVD) have been investigated. The thickness and microstructure of intrinsic a-Si:H films were measured by spectroscopic ellipsometry and Fourier transform infrared spectroscopy (FTIR). The a-Si:H/c-Si interface passivation quality were determined by minority carrier lifetime and transmission electron microscopy (TEM). The current–voltage (I–V) performance of the HJT solar cells were also evaluated. The results reveal that a-Si:H films developed by RF-PECVD with a large area of parallel-plate reactors (> 1 m²) exhibit better thickness uniformity, lower microstructure factor, and higher minority carrier lifetimes. Hence HJT solar cells have achieved efficiency of 24.9%, compared with cell efficiency of 24.6% with intrinsic a-Si:H films developed by VHF-PECVD.

等离子体激发频率对射频（RF，13.56 MH _Z）和甚高频（VHF，40 MH _Z）本征氢化非晶硅（a-Si:H）薄膜和异质结太阳能电池性能的影响等离子体增强化学气相沉积 (PECVD) 已被研究。本征 a-Si:H 薄膜的厚度和微观结构通过光谱椭偏仪和傅里叶变换红外光谱 (FTIR) 测量。a-Si:H/c-Si 界面钝化质量由少数载流子寿命和透射电子显微镜 (TEM) 确定。还评估了 HJT 太阳能电池的电流-电压 (I-V) 性能。结果表明，采用大面积平行板反应器（> 1 m ²) 表现出更好的厚度均匀性、更低的微观结构因子和更高的少数载流子寿命。因此，HJT 太阳能电池实现了 24.9% 的效率，而 VHF-PECVD 开发的本征 a-Si:H 薄膜的电池效率为 24.6%。