We evaluated the photoluminescence (PL), scintillation, and dosimetric properties of Ce–doped Mg₂SiO₄ single crystals. As the PL and optically-stimulated luminescence (OSL) properties, the Ce–doped Mg₂SiO₄ showed the emission from 5d to 4f transitions of Ce³⁺. In the scintillation and thermally-stimulated luminescence (TSL) properties, two emission peaks due to Ce³⁺ and defect centers were observed. The Ce–doped Mg₂SiO₄ showed OSL by stimulating at 600 nm and TSL by heating at 50, 160, 195, and 370 °C. In OSL, linearly proportional responses were confirmed from 10 mGy for the 0.5 and 1% Ce–doped samples to 100 mGy for the 0.1% Ce–doped sample. In TSL, the undoped and Ce–doped samples had the linearity response from 100 to 0.01 mGy, respectively.

我们评估了 Ce 掺杂的 Mg ₂ SiO ₄单晶的光致发光 (PL)、闪烁和剂量学特性。作为 PL 和光学受激发光 (OSL) 特性，Ce 掺杂的 Mg ₂ SiO ₄显示了Ce ³⁺从 5 d到 4 f跃迁的发射。在闪烁和热刺激发光 (TSL) 特性中，观察到由 Ce ³⁺和缺陷中心引起的两个发射峰。Ce掺杂的Mg ₂ SiO ₄通过在 600 nm 刺激显示 OSL，通过在 50、160、195 和 370 °C 加热显示 TSL。在 OSL 中，确认了从 0.5% 和 1% Ce 掺杂样品的 10 mGy 到 0.1% Ce 掺杂样品的 100 mGy 的线性比例响应。在 TSL 中，未掺杂和 Ce 掺杂的样品分别具有 100 至 0.01 mGy 的线性响应。