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Radiation-induced luminescence properties of Ce–doped Mg2SiO4 single crystals
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2021-09-14 , DOI: 10.1007/s10854-021-06962-8
Kensei Ichiba 1 , Yuma Takebuchi 1 , Hiromi Kimura 1 , Takumi Kato 1 , Daisuke Nakauchi 1 , Noriaki Kawaguchi 1 , Takayuki Yanagida 1
Affiliation  

We evaluated the photoluminescence (PL), scintillation, and dosimetric properties of Ce–doped Mg2SiO4 single crystals. As the PL and optically-stimulated luminescence (OSL) properties, the Ce–doped Mg2SiO4 showed the emission from 5d to 4f transitions of Ce3+. In the scintillation and thermally-stimulated luminescence (TSL) properties, two emission peaks due to Ce3+ and defect centers were observed. The Ce–doped Mg2SiO4 showed OSL by stimulating at 600 nm and TSL by heating at 50, 160, 195, and 370 °C. In OSL, linearly proportional responses were confirmed from 10 mGy for the 0.5 and 1% Ce–doped samples to 100 mGy for the 0.1% Ce–doped sample. In TSL, the undoped and Ce–doped samples had the linearity response from 100 to 0.01 mGy, respectively.



中文翻译:

Ce掺杂的Mg2SiO4单晶的辐射诱导发光特性

我们评估了 Ce 掺杂的 Mg 2 SiO 4单晶的光致发光 (PL)、闪烁和剂量学特性。作为 PL 和光学受激发光 (OSL) 特性,Ce 掺杂的 Mg 2 SiO 4显示了Ce 3+从 5 d到 4 f跃迁的发射。在闪烁和热刺激发光 (TSL) 特性中,观察到由 Ce 3+和缺陷中心引起的两个发射峰。Ce掺杂的Mg 2 SiO 4通过在 600 nm 刺激显示 OSL,通过在 50、160、195 和 370 °C 加热显示 TSL。在 OSL 中,确认了从 0.5% 和 1% Ce 掺杂样品的 10 mGy 到 0.1% Ce 掺杂样品的 100 mGy 的线性比例响应。在 TSL 中,未掺杂和 Ce 掺杂的样品分别具有 100 至 0.01 mGy 的线性响应。

更新日期:2021-09-15
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