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Tungsten disulfide thin films via electrodeposition from a single source precursor
Chemical Communications ( IF 4.3 ) Pub Date : 2021-09-02 , DOI: 10.1039/d1cc03297f Shibin Thomas 1 , Victoria K Greenacre 1 , Danielle E Smith 1 , Yasir J Noori 2 , Nema M Abdelazim 2 , Andrew L Hector 1 , C H Kees de Groot 2 , William Levason 1 , Philip N Bartlett 1 , Gillian Reid 1
Chemical Communications ( IF 4.3 ) Pub Date : 2021-09-02 , DOI: 10.1039/d1cc03297f Shibin Thomas 1 , Victoria K Greenacre 1 , Danielle E Smith 1 , Yasir J Noori 2 , Nema M Abdelazim 2 , Andrew L Hector 1 , C H Kees de Groot 2 , William Levason 1 , Philip N Bartlett 1 , Gillian Reid 1
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We report a simple process for the electrodeposition of tungsten disulfide thin films from a CH2Cl2-based electrolyte using a tailored single source precursor, [NEt4]2[WS2Cl4]. This new precursor incorporates the 1 : 2 W : S ratio required for formation of WS2, and eliminates the need for an additional proton source in the electrolyte to remove excess sulfide. The electrochemical behaviour of [NEt4]2[WS2Cl4] is studied by cyclic voltammetry and electrochemical quartz crystal microbalance techniques, and the WS2 thin films are grown by potentiostatic electrodeposition.
中文翻译：
通过单源前驱体的电沉积获得二硫化钨薄膜
我们报告了使用定制的单源前体 [NEt 4 ] 2 [WS 2 Cl 4 ]从 CH 2 Cl 2基电解质电沉积二硫化钨薄膜的简单过程。这种新的前驱体结合了形成 WS 2所需的 1:2 W : S 比例，并且无需在电解质中添加额外的质子源以去除多余的硫化物。采用循环伏安法和电化学石英晶体微天平技术研究了[NEt 4 ] 2 [WS 2 Cl 4 ]的电化学行为，WS 2 薄膜是通过恒电位电沉积生长的。
更新日期：2021-09-15
中文翻译：
通过单源前驱体的电沉积获得二硫化钨薄膜
我们报告了使用定制的单源前体 [NEt 4 ] 2 [WS 2 Cl 4 ]从 CH 2 Cl 2基电解质电沉积二硫化钨薄膜的简单过程。这种新的前驱体结合了形成 WS 2所需的 1:2 W : S 比例，并且无需在电解质中添加额外的质子源以去除多余的硫化物。采用循环伏安法和电化学石英晶体微天平技术研究了[NEt 4 ] 2 [WS 2 Cl 4 ]的电化学行为，WS 2 薄膜是通过恒电位电沉积生长的。
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