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Synergy between Fermi Level of Graphene and Morphology of Polymer Film Allows Broadband or Wavelength-Sensitive Photodetection
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2021-09-14 , DOI: 10.1002/admi.202100770
Miao Yu 1 , Yu Chen 2 , Yong‐Gang Chen 3 , Zhi‐Yong Yang 1 , Wei‐Feng Zhang 4 , Gui Yu 4
Affiliation  

Deliberately tuning the photodetecting performances of polymer/graphene (G) hybrid films through a simple approach and understanding its underlying mechanisms are of significance for developing related devices. Herein, photodetecting features of polymer/G films are successfully tuned from broadband to IR/UV sensitive through a simple thermal treatment, providing optional working modes for varied demands. The morphologies and electronic/photodetecting properties of polymer/G hybrids are characterized in detail through atomic force microscopy, scanning electron microscopy, grazing-incident wide angle X-ray scattering, field effect transistor devices, and density functional theory calculations. The results suggest that the synergetic effect between Fermi level of G and morphologies of polymer film is responsible for the altered sensitivities to different radiations. The former factor shifts the energy barrier of charge carrier transferring for photocurrent generation, while the latter modifies the absorption capabilities of polymer films to the specific lights. Thus, in this work, besides proposing an in-principle multimode photodetecting device for different applications, the intrinsic mechanisms behind the performance modifications and the robust capabilities of simple thermal treatments on tuning activities of polymer/G devices are revealed as well, which provide valuable supports for developing efficient photosensing devices in a facile and rational approach.

中文翻译:

石墨烯的费米能级与聚合物薄膜的形态之间的协同作用允许宽带或波长敏感的光电检测

通过简单的方法有意调整聚合物/石墨烯(G)杂化薄膜的光电检测性能并了解其潜在机制对于开发相关设备具有重要意义。在此,聚合物/G 薄膜的光电检测特性通过简单的热处理成功地从宽带调谐到 IR/UV 敏感,为各种需求提供可选的工作模式。通过原子力显微镜、扫描电子显微镜、掠入射广角 X 射线散射、场效应晶体管器件和密度泛函理论计算,详细表征了聚合物/G 杂化物的形态和电子/光电检测性能。结果表明,G 的费米能​​级与聚合物薄膜形态之间的协同效应是导致对不同辐射的敏感性改变的原因。前一个因素改变了用于光电流产生的电荷载流子转移的能垒,而后者改变了聚合物薄膜对特定光的吸收能力。因此,在这项工作中,除了为不同应用提出原则上的多模光电检测器件外,还揭示了性能修改背后的内在机制和简单热处理对聚合物/G 器件调节活性的强大能力,这提供了有价值的支持以轻松合理的方法开发高效的光敏设备。前一个因素改变了用于光电流产生的电荷载流子转移的能垒,而后者改变了聚合物薄膜对特定光的吸收能力。因此,在这项工作中,除了为不同应用提出原则上的多模光电检测器件外,还揭示了性能修改背后的内在机制和简单热处理对聚合物/G 器件调节活性的强大能力,这提供了有价值的支持以轻松合理的方法开发高效的光敏设备。前一个因素改变了用于光电流产生的电荷载流子转移的能垒,而后者改变了聚合物薄膜对特定光的吸收能力。因此,在这项工作中,除了为不同应用提出原则上的多模光电检测器件外,还揭示了性能修改背后的内在机制和简单热处理对聚合物/G 器件调节活性的强大能力,这提供了有价值的支持以轻松合理的方法开发高效的光敏设备。
更新日期:2021-10-08
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