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Type-III organic/two-dimensional multi-layered phototransistors with promoted operation speed at the communication band
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2021-08-31 , DOI: 10.1039/d1tc03657b Jiayue Han 1 , Chaoyi Zhang 1 , Silu Peng 1 , Xingchao Zhang 1 , Xianchao Liu 1 , Hongxi Zhou 1 , Zhiming Wu 1 , He Yu 1 , Jun Wang 1
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2021-08-31 , DOI: 10.1039/d1tc03657b Jiayue Han 1 , Chaoyi Zhang 1 , Silu Peng 1 , Xingchao Zhang 1 , Xianchao Liu 1 , Hongxi Zhou 1 , Zhiming Wu 1 , He Yu 1 , Jun Wang 1
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The 2D materials Bi2O2Se and graphene have emerged with ultrahigh mobility, showing great potential in near-infrared optical communication and photo-detection with high speed. Nevertheless, for acquiring high photo-responsivity, the prolonged carrier lifetime leads to the photoconductor having an inferior operation speed. In this work, a type-III junction dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN)/Bi2O2Se is constructed on a graphene field-effect transistor, which facilitates photo-generated electron recombination. We observe a broadband response covering the communication band with a highly optimized recovery time down to 101 μs. Consequently, a 3 dB bandwidth of nearly 2 kHz (5-fold improved) is achieved with a 3-fold promotion of detectivity compared to graphene/Bi2O2Se, which is superior in photoconductors. More importantly, with the existence of middle-layer HAT-CN, the external quantum efficiency was improved up to 11.82% with a responsivity to 2420 A W−1. Furthermore, the demonstration of the 3 × 3 array gives potential opportunity in large scale focal imaging. This work not only provides an appropriate path for manufacturing large scale high-performance phototransistors but also exhibits significant potential for high speed optoelectronic applications in the communication band and ultrafast sensing.
中文翻译：
在通信频段提高运行速度的 III 型有机/二维多层光电晶体管
二维材料Bi 2 O 2 Se和石墨烯以超高迁移率出现，在近红外光通信和高速光电探测方面显示出巨大潜力。然而，为了获得高光响应性，延长的载流子寿命导致光电导体具有较差的操作速度。在这项工作中，III 型结双吡嗪 [2,3- f :2',3'- h ]quinoxaline-2,3,6,7,10,11-六甲腈(HAT-CN)/Bi 2 O 2Se 构建在石墨烯场效应晶体管上，可促进光生电子复合。我们观察到覆盖通信频带的宽带响应，其高度优化的恢复时间低至 101 μs。因此，与在光电导体中优越的石墨烯/Bi 2 O 2 Se相比，检测率提高了 3 倍，实现了接近 2 kHz（提高 5 倍）的 3 dB 带宽。更重要的是，由于中间层 HAT-CN 的存在，外量子效率提高了 11.82%，响应度为 2420 AW -1. 此外，3×3 阵列的演示为大规模聚焦成像提供了潜在的机会。这项工作不仅为制造大规模高性能光电晶体管提供了合适的途径，而且在通信波段和超快传感中的高速光电应用方面展现了巨大的潜力。
更新日期：2021-09-14
中文翻译：
在通信频段提高运行速度的 III 型有机/二维多层光电晶体管
二维材料Bi 2 O 2 Se和石墨烯以超高迁移率出现，在近红外光通信和高速光电探测方面显示出巨大潜力。然而，为了获得高光响应性，延长的载流子寿命导致光电导体具有较差的操作速度。在这项工作中，III 型结双吡嗪 [2,3- f :2',3'- h ]quinoxaline-2,3,6,7,10,11-六甲腈(HAT-CN)/Bi 2 O 2Se 构建在石墨烯场效应晶体管上，可促进光生电子复合。我们观察到覆盖通信频带的宽带响应，其高度优化的恢复时间低至 101 μs。因此，与在光电导体中优越的石墨烯/Bi 2 O 2 Se相比，检测率提高了 3 倍，实现了接近 2 kHz（提高 5 倍）的 3 dB 带宽。更重要的是，由于中间层 HAT-CN 的存在，外量子效率提高了 11.82%，响应度为 2420 AW -1. 此外，3×3 阵列的演示为大规模聚焦成像提供了潜在的机会。这项工作不仅为制造大规模高性能光电晶体管提供了合适的途径，而且在通信波段和超快传感中的高速光电应用方面展现了巨大的潜力。
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