Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application,Journal of Materials Chemistry C

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Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2021-08-26 , DOI: 10.1039/d1tc03339e
Yan Tian ₁ , Maoyuan Zheng _{1,

2} , Yong Cheng ₁ , Zhigang Yin ₁ , Ji Jiang ₁ , Gaokai Wang ₁ , Jingren Chen ₁ , Xingxing Li ₃ , Jing Qi ₂ , Xingwang Zhang _{1,

3}

Affiliation

Group IVB (Zr and Hf) transition metal dichalcogenides (TMDs) have attracted considerable attention due to their predicted excellent electronic properties that are superior to group VIB TMDs. However, the synthesis of high-quality ZrSe₂ layers is seldom reported, greatly hindering the development of this new field. Herein, the epitaxial growth of ZrSe₂ on c-plane sapphire substrates is, for the first time, demonstrated using the low-pressure chemical vapor deposition (CVD) method. Impressively, the CVD-grown high-quality ZrSe₂ layers exhibit an atomically sharp interface with the underlying substrate, and their epitaxial relationship is determined to be: ZrSe₂ (0001)[10–10]||Al₂O₃ (0001)[11–20]. The electronic band structures of ZrSe₂ are calculated using density functional theory methods, showing an indirect band gap of 1.19 eV and a minimum direct band gap of 1.79 eV, respectively. The band gap of ZrSe₂ layers is also determined from the UV-visible absorption spectra, which is in good agreement with our band-structure calculations. Furthermore, a photodetector was fabricated based on the CVD-grown ZrSe₂ layer on a sapphire substrate, which exhibits a stable and appreciable photoresponse for visible light.

中文翻译：

通过化学气相沉积在蓝宝石上外延生长 ZrSe2 纳米片用于光电应用

IVB 族（Zr 和 Hf）过渡金属二硫属化物（TMDs）由于其预测的优异电子性能优于 VIB 族 TMDs 而引起了相当大的关注。然而，高质量ZrSe ₂层的合成鲜有报道，极大地阻碍了这一新领域的发展。在此，首次使用低压化学气相沉积 (CVD) 方法证明了 ZrSe ₂在c面蓝宝石衬底上的外延生长。令人印象深刻的是，CVD 生长的高质量 ZrSe ₂层与下面的衬底呈现出原子级尖锐的界面，它们的外延关系确定为：ZrSe ₂ (0001)[10-10]||Al ₂ O₃ (0001) [11–20]。ZrSe₂的电子能带结构使用密度泛函理论方法计算，分别显示出1.19 eV的间接带隙和1.79 eV的最小直接带隙。ZrSe₂层的带隙也由紫外-可见吸收光谱确定，这与我们的带结构计算非常吻合。此外，基于蓝宝石衬底上 CVD 生长的 ZrSe₂层制造了一个光电探测器，其对可见光表现出稳定且可观的光响应。

更新日期：2021-09-14

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