Organometal halide perovskites have recently attracted significant attention as switching materials for resistive random-access memory (ReRAM) applications. However, the susceptibility of conventional 3D hybrid halide perovskites to ambient condition has so far remained a deterrent. The promise of a lead-free and layered inorganic halide perovskite, Cs₃Sb₂I₉, in designing efficient ReRAM and artificial synaptic devices is herein demonstrated. The memristive devices exhibit a reproducible bipolar resistive-switching with a large on/off ratio of ≈10⁴, an excellent retention over 10⁴ s, and a remarkable environmental sturdiness. As per available literature, the ratio is one of the highest in electroforming-free ReRAM devices based on halide perovskites. Moreover, owing to an intrinsic electronic–ionic coupling and a strong light–matter interaction in the perovskite, the ReRAM devices show promises toward realization of phototunable memories and artificial synaptic devices with capabilities of concurrent processing and learning. This work hence emphasizes the prospect of layered Cs₃Sb₂I₉ perovskite thin-films toward designing of next-generation high-performance nonvolatile memory devices.

中文翻译：

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层状 Cs3Sb2I9 无铅钙钛矿存储器件中的大电阻开关和人工突触行为

有机金属卤化物钙钛矿最近作为电阻随机存取存储器 (ReRAM) 应用的开关材料引起了广泛关注。然而，迄今为止，传统的 3D 杂化卤化物钙钛矿对环境条件的敏感性仍然是一种威慑。本文展示了无铅和层状无机卤化物钙钛矿 Cs ₃ Sb ₂ I ₉在设计高效 ReRAM 和人工突触装置方面的前景。忆阻器件表现出可重现的双极电阻开关，具有≈10 ⁴的大开/关比，在 10 ^{4 范围内}具有出色的保持力s，以及显着的环境稳定性。根据现有文献，该比率是基于卤化物钙钛矿的无电铸 ReRAM 器件中最高的比率之一。此外，由于钙钛矿中固有的电子-离子耦合和强光-物质相互作用，ReRAM 器件有望实现具有并发处理和学习能力的光可调存储器和人工突触器件。因此，这项工作强调了层状 Cs ₃ Sb ₂ I ₉钙钛矿薄膜在设计下一代高性能非易失性存储器件方面的前景。