Temperature sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature ( TjT_{j} ) detection and prediction of power devices, especially the switching parameter. In this article, the voltage-rise time and its loss during the turn-off process are used as the TSEP index for the detection of junction temperature because of the coupling relationship with the maximum junction temperature. In addition, the effect of junction temperature on the current-fall time and its loss is compared. The theoretical analysis is verified by SABER simulation and H-bridge inverter circuit platform. It is established that the model based on voltage-rise time ( trvt_{\mathrm {rv}} ) and voltage-rise loss ( ErvE_{\mathrm {rv}} ) is a viable model with good linearity, fixed sensitivity, and offers nondestructive insulated gate bipolar translator (IGBT) junction temperature extraction.

中文翻译：

---

基于电压上升时间和电压上升损耗混合模型的结温提取方法


温度敏感电参数（TSEP）方法广泛应用于功率器件的结温（TjT_{j}）检测和预测，特别是开关参数。由于与最高结温的耦合关系，本文采用电压上升时间及其关断过程中的损耗作为检测结温的TSEP指标。此外，还比较了结温对电流下降时间及其损耗的影响。通过SABRE仿真和H桥逆变电路平台验证了理论分析。经证实，基于电压上升时间 ( trvt_{\mathrm {rv}} ) 和电压上升损耗 ( ErvE_{\mathrm {rv}} ) 的模型是一种可行的模型，具有良好的线性度、固定灵敏度，并提供无损绝缘栅双极转换器 (IGBT) 结温提取。