CuO exhibits superior properties in semiconducting technology. The preparation with thermal activation can be found in several previous reports. Consequently, the synthesizing process at room temperature is interesting because of no energy consumption, reducing production costs. For material property modification, incorporated metal atoms affect the morphology and properties of the host lattice. Accordingly, the purpose of this work is to study the consequence of Zn doping on the structural and optical properties of CuO, prepared via room temperature synthesizing process of wet chemical precipitation without further calcination. Various analytical techniques studied crystal structure, morphology, chemical composition, and optical properties. X-ray Diffraction (XRD) analysis revealed the formation of a pure monoclinic CuO phase with crystallite size in the range of 25–38 nm. As increasing Zn content, structural and optical properties of doped CuO were changed comparing with pure CuO. Scanning electron microscope (SEM) displayed morphology transformation from irregular plates to nanoparticles. TEM images elucidated the formation of crystals in the different directions of block aggregation. Specific surface area (SSA) revealed a reducing value from 17.2567 to 16.6128 m²/g. PL emission assigned to near band-edge emission at 445 nm and oxygen vacancy existence at 519 nm. Comparison with pristine CuO, PL intensity quenching was found in doped CuO. The reduction of electron-hole recombination corresponds to the increasing energy bandgap with linear tendency, appearing at 2.80–2.94 eV. Finally, this synthesizing route is effective and can extend synthesizing technology to other doped metal oxide nanostructures.

CuO 在半导体技术中表现出优异的性能。在之前的几份报告中可以找到热活化的制备。因此，室温下的合成过程很有趣，因为没有能源消耗，降低了生产成本。对于材料性质的修改，掺入的金属原子会影响主晶格的形态和性质。因此，这项工作的目的是研究 Zn 掺杂对 CuO 结构和光学性质的影响，CuO 是通过湿化学沉淀的室温合成过程制备的，无需进一步煅烧。各种分析技术研究了晶体结构、形态、化学成分和光学特性。X 射线衍射 (XRD) 分析揭示了纯单斜 CuO 相的形成，晶粒尺寸在 25-38 nm 范围内。随着Zn含量的增加，与纯CuO相比，掺杂CuO的结构和光学性质发生了变化。扫描电子显微镜 (SEM) 显示了从不规则板到纳米颗粒的形态转变。TEM 图像阐明了晶体在块体聚集的不同方向上的形成。比表面积 (SSA) 显示值从 17.2567 降至 16.6128 m TEM 图像阐明了晶体在块体聚集的不同方向上的形成。比表面积 (SSA) 显示值从 17.2567 降至 16.6128 m TEM 图像阐明了晶体在块体聚集的不同方向上的形成。比表面积 (SSA) 显示值从 17.2567 降至 16.6128 m² /克。PL 发射分配给 445 nm 处的近带边发射和 519 nm 处的氧空位存在。与原始 CuO 相比，在掺杂的 CuO 中发现了 PL 强度猝灭。电子 - 空穴复合的减少对应于具有线性趋势的增加的能带隙，出现在 2.80-2.94 eV。最后，这种合成路线是有效的，可以将合成技术扩展到其他掺杂的金属氧化物纳米结构。