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The Effect of the Degree of Fluorination on the MOCVD Growth of Cobalt Oxide Thin Films using Co(II) Acetylacetonate Complexes
European Journal of Inorganic Chemistry ( IF 2.2 ) Pub Date : 2021-09-14 , DOI: 10.1002/ejic.202100662 Christian Stienen 1 , Detlef Rogalla 2 , Oleg Prymak 1 , Georg Bendt 3
European Journal of Inorganic Chemistry ( IF 2.2 ) Pub Date : 2021-09-14 , DOI: 10.1002/ejic.202100662 Christian Stienen 1 , Detlef Rogalla 2 , Oleg Prymak 1 , Georg Bendt 3
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The four structural related cobalt-β-diketonate complexes Co(acac)2, Co(acac)2 ⋅ TMEDA, Co(tfac)2 ⋅ TMEDA and Co(hfac)2 ⋅ TMEDA with different degree of fluorination were thermochemically evaluated and used as precursors for the MOCVD growth of cobalt monoxide thin films. The influence of the degree of fluorination of the cobalt precursors on impurities (carbon, nitrogen, and fluorine) in the CoO films and the influence of these impurities on the electrocatalytically activity for the oxygen evolution reaction (OER) in alkaline media was investigated in detail.
中文翻译：
氟化程度对使用 Co(II) 乙酰丙酮络合物的氧化钴薄膜 MOCVD 生长的影响
对 具有不同氟化度的四种结构相关的钴-β-二酮配合物 Co(acac) 2、Co(acac) 2 ⋅ TMEDA、Co(tfac) 2 ⋅ TMEDA 和 Co(hfac) 2 ⋅ TMEDA 进行热化学评估并用作一氧化钴薄膜的 MOCVD 生长的前体。详细研究了钴前驱体的氟化程度对 CoO 薄膜中杂质（碳、氮和氟）的影响以及这些杂质对碱性介质中析氧反应 (OER) 电催化活性的影响.
更新日期：2021-11-02
中文翻译：
氟化程度对使用 Co(II) 乙酰丙酮络合物的氧化钴薄膜 MOCVD 生长的影响
对 具有不同氟化度的四种结构相关的钴-β-二酮配合物 Co(acac) 2、Co(acac) 2 ⋅ TMEDA、Co(tfac) 2 ⋅ TMEDA 和 Co(hfac) 2 ⋅ TMEDA 进行热化学评估并用作一氧化钴薄膜的 MOCVD 生长的前体。详细研究了钴前驱体的氟化程度对 CoO 薄膜中杂质（碳、氮和氟）的影响以及这些杂质对碱性介质中析氧反应 (OER) 电催化活性的影响.
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