Interface Passivation and Hole Injection Improvement of Solution-Processed White Organic Light-Emitting Diodes through Embedding an Ultrathin Graphene Oxide Layer,Advanced Materials Interfaces

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Interface Passivation and Hole Injection Improvement of Solution-Processed White Organic Light-Emitting Diodes through Embedding an Ultrathin Graphene Oxide Layer
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2021-09-13 , DOI: 10.1002/admi.202100794
Jiong Wang ₁ , Li‐Xiang Fan ₁ , Yu‐zhu Wang ₁ , Yang‐cheng Wang ₁ , Yue Qin ₁ , Rui‐qing Li ₁ , Yue‐hua Chen ₁ , Yu Yan ₁ , Wen‐yong Lai _{1,

2} , Xin‐wen Zhang ₁ , Wei Huang _{1,

2}

Affiliation

To cut cost and improve device performance, expensive and acidic hole transport material (HTM) PEDOT:PSS is replaced by copper(I) thiocyanate (CuSCN) and NiO_x in solution-processed white organic light-emitting diodes, respectively. However, the luminescence quenching caused by interfacial defects on the surfaces of CuSCN and NiO_x limits the devices’ full potential. To crack the nuts, an ultrathin graphene oxide (GO) layer is inserted between hole transport layer (HTL) and emitting layer (EML) as a passivation layer. The time-resolved photoluminescence spectra of EML intuitively prove the inhibitory effect of GO on exciton quenching. What is more, the ultraviolet photoelectron spectroscopy and impedance spectroscopy reveal that the ultrathin GO layer can also increase the work function of HTM and promote hole injection. Relative to the devices without a GO layer, the efficiency of CuSCN/GO-containing device is enhanced from 18.1 cd A⁻¹ (6.6 lm W⁻¹) to 30.3 cd A⁻¹ (19.8 lm W⁻¹), and the device with NiO_x/GO achieves an enhancement of power efficiency by 98%, from 10.1 to 20.0 lm W⁻¹.

中文翻译：

通过嵌入超薄氧化石墨烯层改善溶液处理的白色有机发光二极管的界面钝化和空穴注入

为了降低成本和提高器件性能，在溶液处理的白色有机发光二极管中，昂贵的酸性空穴传输材料 (HTM) PEDOT:PSS 分别被硫氰酸铜 (I) (CuSCN) 和 NiO _x取代。然而，CuSCN 和 NiO _x表面的界面缺陷引起的发光猝灭限制了设备的全部潜力。为了破解坚果，在空穴传输层 (HTL) 和发光层 (EML) 之间插入超薄氧化石墨烯 (GO) 层作为钝化层。EML的时间分辨光致发光光谱直观地证明了GO对激子猝灭的抑制作用。此外，紫外光电子能谱和阻抗谱表明，超薄 GO 层还可以增加 HTM 的功函数并促进空穴注入。相对于没有 GO 层的器件，含有 CuSCN/GO 的器件的效率从 18.1 cd A ^-1 (6.6 lm W ^-1 ) 提高到 30.3 cd A ^-1 (19.8 lm W ^-1 )，并且器件与氧化镍_X/GO 实现了 98% 的功率效率提高，从 10.1 到 20.0 lm W ^-1。

更新日期：2021-10-08

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