This paper presents the Electromagnetic modelling and simulation analysis of an RF MEMS Shunt switch. The Sparameters are investigated with different analysis such as changing beam structure, materials, thickness of the beam, and signal dielectric. The pull-in voltage of the proposed switch is obtained as 1.9 V. The RF-performance mainly depends on the up and down state of the switch, these analysis are done in the ANSYS HFSS simulator tool. The evaluated return and insertion losses are −44.7486 dB and −0.9598 dB, and the switch exhibits a good isolation of −49.1809 dB at 43 GHz frequency. RF-Performance is obtained at 26–45 GHz range. So, the proposed switch can be applicable for 5G applications.

本文介绍了射频 MEMS 分流开关的电磁建模和仿真分析。该小号参数与不同的分析研究，例如改变梁结构，材料，光束的厚度，和信号电介质。建议开关的吸合电压为 1.9 V。RF 性能主要取决于开关的上下状态，这些分析是在 ANSYS HFSS 模拟器工具中完成的。评估的回波和插入损耗为 -44.7486 dB 和 -0.9598 dB，并且该开关在 43 GHz 频率下具有 -49.1809 dB 的良好隔离度。射频性能在 26–45 GHz 范围内获得。因此，建议的交换机可适用于 5G 应用。