Elaboration of the technology of the multicomponent Quantum Wells (QWs) based devices requires repeated time consuming diffraction curves analysis proceeded for each of the grown structures to determine their basis structural parameters. Optimization of the diagnostic procedures and making them more efficient is the key point from the manufacturer point of view. In this paper we present the use of Fast Fourier Transform (FFT) employed to fast determination of the thickness of epitaxial layers. The presented method combines the approach using the Rocking Curves (RC) measured by X-ray Diffraction (XRD) together with the analysis of the FFT spectrum. In this work GaInNAs/GaAs MQWs structures grown by atmospheric pressure-metalorganic vapour phase epitaxy (AP-MOVPE) were investigated. In the case of the series of the defined type samples, this method allows replacement of the time consuming simulation method used for diagnostic of the thickness of deposited layers in favor of FFT spectrum analysis.

基于多组分量子阱 (QW) 的设备技术的完善需要对每个生长结构进行重复耗时的衍射曲线分析，以确定它们的基本结构参数。从制造商的角度来看，优化诊断程序并使其更有效是关键。在本文中，我们介绍了使用快速傅立叶变换 (FFT) 来快速确定外延层厚度的方法。所提出的方法将使用通过 X 射线衍射 (XRD) 测量的摇摆曲线 (RC) 的方法与 FFT 谱分析相结合。在这项工作中，研究了通过大气压 - 金属有机气相外延（AP-MOVPE）生长的 GaInNAs/GaAs MQWs 结构。在定义类型样本系列的情况下，