Currently, 3D integration is considered to be the most promising development direction forchip industry. It relies on the through-silicon via (TSV) structure to achieve mechanical and electrical interconnection in the vertical direction. The manufacturing of TSV is usually accomplished by etching technique, which can produce a hole with high aspect ratio by removing the material from a specific area physically or chemically. At present, the mainstream TSV manufacturing methods include KOH wet etching, laser drilling, deep reactive ion etching and photo-assisted electrochemical etching. However, a cross-sectional comparison of their characteristic was lacking in the literature. This review aims to provide a comprehensive summary for four kinds of mainstream TSV etching methods, i.e., KOH wet etching, laser drilling, deep reactive ion etching and photo-assisted electrochemical etching, including their etching mechanism, process, parameters and hole structure. Finally, this paper summarizes and prospects the four methods for TSV etching, providing researchers and engineers with an extensive and updated understanding of the principles and applications for these four mainstream TSV etching methods.

目前，3D集成被认为是芯片产业最有前途的发展方向。它依靠硅通孔（TSV）结构来实现垂直方向的机械和电气互连。TSV的制造通常是通过蚀刻技术来完成的，它可以通过物理或化学方式从特定区域去除材料，从而产生高深宽比的孔。目前主流的TSV制造方法包括KOH湿法蚀刻、激光钻孔、深反应离子蚀刻和光辅助电化学蚀刻。然而，文献中缺乏对它们特征的横断面比较。本综述旨在对四种主流的TSV蚀刻方法，即KOH湿法蚀刻、激光钻孔、深反应离子蚀刻和光辅助电化学蚀刻，包括它们的蚀刻机理、工艺、参数和孔结构。最后，本文对TSV蚀刻的四种方法进行了总结和展望，为研究人员和工程师提供了对这四种主流TSV蚀刻方法的原理和应用的广泛和更新的理解。