Ultrathin Polythiophene Films Prepared by Vertical Phase Separation for Highly Stretchable Organic Field-Effect Transistors,Advanced Electronic Materials

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Ultrathin Polythiophene Films Prepared by Vertical Phase Separation for Highly Stretchable Organic Field-Effect Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-09-12 , DOI: 10.1002/aelm.202100591
Xiaohong Wang ₁ , Yingman Zhu ₁ , Zhen Liu ₁ , Ye Yuan ₁ , Longzhen Qiu ₁

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Physically blending semiconducting conjugated polymers with elastomeric materials and precisely controlling the resulting film structure provides an effective strategy to obtain intrinsically stretchable semiconducting polymers. Here, vertically phase-separated ultrathin poly(3-hexylthiophene) (P3HT) and polystyrene-b-polyisoprene-b-polystyrene (SIS) blend films are developed for one-step fabrication of semiconductor and insulator layers of organic field effect transistors (OFETs). The phase-separated structure, surface morphology, and tensile deformation are characterized by UV–vis absorption spectroscopy, atomic force microscopy, and optical microscopy. The blend film device maintains 43% of its mobility compared with 0.1% mobility of the pristine P3HT films after 50% stretch. The deformability of the films is efficiently improved by blending proved by both the finite element analysis and the dichroic ratio measurements. The P3HT/SIS blended films possess reproducible properties under 200 continuous stretch–release cycles at a strain of 50% without significantly reduced mobilities. The fully-stretchable OFETs on polydimethylsiloxane substrate are also investigated and show a stretchability up to 70% and good electrical recovery properties after stretch–release process. The vertical phase-separated structure obtained by the blends provides an effective way to easily fabricate stretchable devices with a balance between their mechanical and electrical properties.

中文翻译：

垂直相分离制备高拉伸有机场效应晶体管的超薄聚噻吩薄膜

将半导体共轭聚合物与弹性体材料物理混合并精确控制所得薄膜结构提供了一种获得本征可拉伸半导体聚合物的有效策略。这里，垂直方向的相分离超薄聚（3-己基噻吩）（P3HT）和聚苯乙烯- b -polyisoprene- b聚苯乙烯 (SIS) 共混薄膜开发用于一步制造有机场效应晶体管 (OFET) 的半导体和绝缘体层。相分离结构、表面形貌和拉伸变形通过紫外可见吸收光谱、原子力显微镜和光学显微镜进行表征。与原始 P3HT 薄膜在 50% 拉伸后的 0.1% 迁移率相比，混合薄膜设备保持了 43% 的迁移率。通过有限元分析和二向色比测量证明的混合有效地改善了薄膜的变形能力。P3HT/SIS 混合薄膜在 50% 应变下 200 次连续拉伸释放循环下具有可再现的特性，而没有显着降低迁移率。还研究了聚二甲基硅氧烷基板上的完全可拉伸 OFET，在拉伸释放过程后显示出高达 70% 的可拉伸性和良好的电恢复性能。由共混物获得的垂直相分离结构提供了一种有效的方法来轻松制造可拉伸设备，并在其机械和电性能之间取得平衡。

更新日期：2021-11-10

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