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Frequency and voltage-dependent dielectric spectroscopy characterization of Al/(Coumarin-PVA)/p-Si structures
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2021-09-13 , DOI: 10.1007/s10854-021-06993-1
Selçuk Demirezen 1 , Seçkin Altındal Yerişkin 2
Affiliation  

In this study, the frequency/voltage dependence of the dielectric constant (ε′), dielectric loss (ε″), real/imaginary components of the complex electric modulus (M′, M″), tangent loss (tan δ), ac electrical conductivity (σac), real and the imaginary parts of the complex impedance (Z*), phase angle (θ) between resistance current, and capacitive current of the Al/(Coumarin: PVA)/p-Si structures were investigated using C/G-V-f measurements in wide range of frequency (10 kHz–1 MHz) and voltage (± 5 V) by 0.05 V steps. These parameters showed strong dependence on frequency and voltage due to the existence of surface states (Nss), their life/relaxation time (τ), series resistance (Rs), and polarization processes. ε′ and ε″ values were found to be high at lower frequencies and this was explained by the fact that the interfacial dipoles have enough time to orient themselves in the direction of the signal and thus Nss can easily follow it. M′−V and M″−V plots both have a distinctive peak at depletion region and peak position shifts toward accumulation region with increasing frequency due to restructuring and reordering of Nss under electric field and polarization. ln(σ)−ln(f) plots for accumulation region show two linear parts with different slopes, and this provides an evidence to the existence of two different conduction mechanisms which correspond to intermediate and high frequency regions. The strong dispersion in ε′ and ε″ at lower frequencies was attributed to the Nss, Maxwell–Wagner-type polarizations.



中文翻译:

Al/(Coumarin-PVA)/p-Si 结构的频率和电压相关介电光谱表征

在这项研究中,介电常数(频率/电压依赖性ε '),介电损耗(ε “),实时/复电模量(的虚数分量中号',中号”),正切损耗(tanδ δ),交流电导率 ( σ ac )、复阻抗的实部和虚部 ( Z * )、相角 ( θ) 之间的电阻电流和 Al/(香豆素:PVA)/p-Si 结构的电容电流之间的差异使用 C/GVf 测量在宽频率 (10 kHz–1 MHz) 和电压 (± 5 V) 范围内进行了 0.05 的研究V步。由于表面状态 ( N ss )、它们的寿命/松弛时间 ( τ )、串联电阻 ( R s ) 和极化过程的存在,这些参数显示出对频率和电压的强烈依赖性。ε '和ε被发现“的值是在较低的频率高,这是由以下事实的界面偶极子有足够的时间来使自己在信号的方向并因此解释Ñ SS可以轻松地跟踪它。由于电场和极化下N ss 的重构和重新排序,M ′- VM ″- V曲线在耗尽区都有一个独特的峰值,并且峰值位置随着频率的增加而向积累区移动。ln( σ )−ln( f ) 积聚区图显示了两个具有不同斜率的线性部分,这为存在对应于中高频区的两种不同传导机制提供了证据。较低频率下ε ′ 和ε ″的强色散归因于N ss, Maxwell-Wagner 型极化。

更新日期:2021-09-13
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