Silver-induced chemical etching (SIE) has been widely explored for developing silicon (Si) based photovoltaic devices with its benefits for low-cost and large-area fabrication of silicon nanowires (SiNWs) of high aspect ratios. Structures and optical properties of SiNWs fabricated through chemical etching are significantly affected by experimental as well as environmental conditions of etching. A comparative study of quantum confinement (QC) effect due to variation in nano crystallite size (NCS) of SiNWs samples, fabricated by SIE technique has been investigated here using ultraviolet visible (UV-VIS) spectroscopy and Raman spectroscopy. An enhanced optical band gap has been observed from the samples under UV excitation at room temperature due to QC effect. To improve the understanding of basic mechanism of QC effect present in samples has been analyzed through characteristic features of Raman line-shape like red shift, asymmetry ratio and broadening as compared to its bulk counterpart. The NCS of SiNWs present in the samples has been calculated by QC based Brus model, bond polarizability (BP) model and Raman line-shape fitting model. This study prove itself to explore a new direction towards a systematic building block for fabricating optoelectronic devices based on light - matter interactions present at the nano-scale.

银诱导化学蚀刻 (SIE) 已被广泛探索用于开发基于硅 (Si) 的光伏器件，其优势在于低成本和大面积制造高纵横比的硅纳米线 (SiNW)。通过化学蚀刻制造的 SiNW 的结构和光学性能受实验和蚀刻环境条件的显着影响。这里使用紫外可见 (UV-VIS) 光谱和拉曼光谱研究了由 SIE 技术制造的 SiNWs 样品的纳米微晶尺寸 (NCS) 变化引起的量子限制 (QC) 效应的比较研究。由于 QC 效应，在室温下 UV 激发下的样品中观察到增强的光学带隙。为了更好地理解样品中存在的 QC 效应的基本机制，已通过拉曼线形的特征特征（如红移、不对称比和与其本体对应物相比的展宽）进行了分析。样品中存在的 SiNW 的 NCS 已通过基于 QC 的 Brus 模型、键极化 (BP) 模型和拉曼线形拟合模型计算。这项研究证明了自己探索了一个新的方向，即基于纳米尺度上存在的光-物质相互作用来制造光电器件的系统构建块。键极化（BP）模型和拉曼线形拟合模型。这项研究证明了自己探索了一个新的方向，即基于纳米尺度上存在的光-物质相互作用来制造光电器件的系统构建块。键极化（BP）模型和拉曼线形拟合模型。这项研究证明了自己探索了一个新的方向，即基于纳米尺度上存在的光-物质相互作用来制造光电器件的系统构建块。