Diminished Trap-Induced Leakage Current at the Organic/Electrode Interface for High-Performance Organic Photodetectors,ACS Applied Electronic Materials

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Diminished Trap-Induced Leakage Current at the Organic/Electrode Interface for High-Performance Organic Photodetectors
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-09-13 , DOI: 10.1021/acsaelm.1c00563
Huan Cao ₁ , Yichuan Si ₁ , Yuan Xie ₁ , Jingwen Li ₁ , Guanghong Liu ₁ , Hongbin Wu ₁

Affiliation

The influence of the absence of a π-conjugated polymer-based charge-blocking layer (CBL) or interlayer between the photoactive layer/electrode interface in organic photodetectors (OPDs) is investigated. As compared to devices with a charge-blocking layer, OPDs with a metal/photoactive layer/metal sandwich structure exhibit similar external quantum efficiency but lower dark current density hence a higher specific detectivity (D*). The decrease in dark current density in devices without a CBL can be attributed to the elimination of additional trap states in the CBL, provided that a large charge injection barrier is maintained at the metal/active layer interface. In a device with the CBL, a clear dependence between the density of trap states (tDOS) and the magnitude of dark current density is verified. As such, suppressing undesired injection and trap-induced leakage current may cancel each other out in the device with a CBL. By evaluating the trap-induced leakage of current, we proposed that the key to obtain high specific detectivity in OPDs is to use a charge-blocking layer with low trap density or to use a CBL-free device structure.

中文翻译：

用于高性能有机光电探测器的有机/电极界面处的陷阱诱导漏电流减少

研究了有机光电探测器 (OPD) 中光敏层/电极界面之间不存在基于 π 共轭聚合物的电荷阻挡层 (CBL) 或夹层的影响。与具有电荷阻挡层的器件相比，具有金属/光敏层/金属夹层结构的 OPD 表现出相似的外部量子效率，但暗电流密度较低，因此具有更高的比检测率（D*）。如果在金属/有源层界面处保持大的电荷注入势垒，则没有 CBL 的器件中暗电流密度的降低可归因于 CBL 中额外陷阱态的消除。在带有 CBL 的器件中，陷阱态密度 (tDOS) 与暗电流密度大小之间存在明显的相关性。因此，在具有 CBL 的器件中，抑制不需要的注入和陷阱引起的漏电流可以相互抵消。通过评估陷阱引起的电流泄漏，我们提出在 OPD 中获得高比检测率的关键是使用低陷阱密度的电荷阻挡层或使用无 CBL 的器件结构。

更新日期：2021-09-28

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