Slotted photonic crystal (SPC) cavities provide strong evanescent fields, high quality factors, and small mode volumes. Hence, SPC cavities have been identified as promising candidates for the implementation of high-performance sensors and the development of hybrid devices combining silicon with other active materials. Nevertheless, most state-of-the-art demonstrations rely on electron beam lithography and operate in the telecommunications band near the 1550 nm wavelength. Here, we report the experimental demonstration of SPC cavities operating in the datacom O-band, near 1340 nm wavelength, fabricated using deep-ultraviolet (DUV) lithography. The O-band provides very interesting properties for sensing, communications, and hybrid integration: namely, lower optical absorption of water, lower dispersion in standard optical fibers, and the emission of active materials like carbon nanotubes. On the other hand, DUV fabrication opens interesting opportunities for large volume production. The proposed cavities exhibit a high quality factor exceeding 20,000 and a small mode volume of ${0.023}{(\lambda /{n})^3}$. These results open interesting perspectives to exploit enhanced light–matter interaction in SPC cavities harnessing industrial-like fabrication processes.

中文翻译：

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深紫外光刻法制造的硅开槽光子晶体腔

开槽光子晶体 (SPC) 腔提供强大的渐逝场、高质量因子和小模式体积。因此，SPC 腔已被确定为实现高性能传感器和开发将硅与其他活性材料相结合的混合设备的有希望的候选者。尽管如此，大多数最先进的演示都依赖于电子束光刻，并在 1550 nm 波长附近的电信波段中运行。在这里，我们报告了在数据通信 O 波段工作的 SPC 腔的实验演示，接近 1340 nm 波长，使用深紫外 (DUV) 光刻制造。O 波段为传感、通信和混合集成提供了非常有趣的特性：即，水的光吸收较低，标准光纤中的色散较低，以及碳纳米管等活性材料的排放。另一方面，DUV 制造为大批量生产开辟了有趣的机会。所提出的腔表现出超过 20,000 的高品质因数和小模式体积${0.023}{(\lambda /{n})^3}$。这些结果为利用类似工业制造工艺的 SPC 腔中增强的光-物质相互作用开辟了有趣的视角。