Nanoscale ruthenium (Ru)-based materials are promising replacements for existing multilayered Cu interconnects in integrated circuits. However, it is not easy to apply the results of previously reported studies directly to the electrochemical damascene process because the previous studies have mainly focused on thin films by dry deposition. Here, we report the electrical resistivity and microstructure of electrodeposited Ru nanowires. We estimate that the resistivity value of a 10 nm diameter Ru nanowire to be 71.6 μΩ cm after analyzing the resistivity values of individual nanowires with various diameters. Furthermore, we investigate the electrical properties of Ru_xCo_1-x nanowires where x is 0.04–0.99 at.% as possible replacements of the current TaN barrier structures. Over the entire composition range, the resistivity values of alloys are much lower than that of the conventional TaN. Additionally, Ru and Ru-alloy nanowires surrounded by dielectric silica are thermally stable after 450 °C heat treatment. Therefore, the nanoscale Ru and Ru-Co alloys possessing low resistivity values can be candidates for the interconnect and barrier materials, respectively.

纳米级钌 (Ru) 基材料有望替代集成电路中现有的多层铜互连。然而，将先前报道的研究结果直接应用于电化学镶嵌工艺并不容易，因为先前的研究主要集中在干法沉积的薄膜上。在这里，我们报告了电沉积 Ru 纳米线的电阻率和微观结构。在分析了各种直径的单个纳米线的电阻率值后，我们估计 10 nm 直径的 Ru 纳米线的电阻率值为 71.6 μΩ cm。此外，我们研究了 Ru _x Co _{1- x}纳米线的电性能，其中x是 0.04–0.99 at.% 作为当前 TaN 势垒结构的可能替代品。在整个成分范围内，合金的电阻率值远低于传统 TaN 的电阻率值。此外，被介电二氧化硅包围的 Ru 和 Ru 合金纳米线在 450 °C 热处理后具有热稳定性。因此，具有低电阻率值的纳米级 Ru 和 Ru-Co 合金可以分别作为互连和阻挡材料的候选材料。