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Stochastic and sinusoidal electrical stimuli increase the irregularity and gain of Type A and B medial vestibular nucleus neurons, in vitro
Journal of Neuroscience Research ( IF 2.9 ) Pub Date : 2021-09-12 , DOI: 10.1002/jnr.24957
Sebastian P Stefani 1 , Christopher J Pastras 1 , Jorge M Serrador 2 , Paul P Breen 3 , Aaron J Camp 1
Affiliation  

Galvanic vestibular stimulation (GVS) has been shown to improve vestibular function potentially via stochastic resonance, however, it remains unknown how central vestibular nuclei process these signals. In vivo work applying electrical stimuli to the vestibular apparatus of animals has shown changes in neuronal discharge at the level of the primary vestibular afferents and hair cells. This study aimed to determine the cellular impacts of stochastic, sinusoidal, and stochastic + sinusoidal stimuli on individual medial vestibular nucleus (MVN) neurons of male and female C57BL/6 mice. All stimuli increased the irregularity of MVN neuronal discharge, while differentially affecting neuronal gain. This suggests that the heterogeneous MVN neuronal population (marked by differential expression of ion channels), may influence the impact of electrical stimuli on neuronal discharge. Neuronal subtypes showed increased variability of neuronal firing, where Type A and B neurons experienced the largest gain changes in response to stochastic and sinusoidal stimuli. Type C neurons were the least affected regarding neuronal firing variability and gain changes. The membrane potential (MP) of neurons was altered by sinusoidal and stochastic + sinusoidal stimuli, with Type B and C neuronal MP significantly affected. These results indicate that GVS-like electrical stimuli impact MVN neuronal discharge differentially, likely as a result of heterogeneous ion channel expression.

中文翻译:

随机和正弦电刺激增加 A 型和 B 型内侧前庭核神经元的不规则性和增益,体外

电流前庭刺激 (GVS) 已被证明可以通过随机共振潜在地改善前庭功能,然而,中央前庭核如何处理这些信号仍然未知。体内对动物的前庭器官施加电刺激的工作表明,初级前庭传入神经和毛细胞水平的神经元放电发生了变化。本研究旨在确定随机、正弦和随机 + 正弦刺激对雄性和雌性 C57BL/6 小鼠的单个内侧前庭核 (MVN) 神经元的细胞影响。所有刺激都增加了 MVN 神经元放电的不规则性,同时对神经元增益有不同的影响。这表明异质 MVN 神经元群(以离子通道的差异表达为标志)可能会影响电刺激对神经元放电的影响。神经元亚型显示神经元放电的变异性增加,其中 A 型和 B 型神经元在响应随机和正弦刺激时经历了最大的增益变化。C 型神经元对神经元放电变异性和增益变化的影响最小。神经元的膜电位 (MP) 被正弦和随机 + 正弦刺激改变,B 型和 C 型神经元 MP 受到显着影响。这些结果表明,类似 GVS 的电刺激对 MVN 神经元放电的影响不同,可能是异质离子通道表达的结果。
更新日期:2021-09-12
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