Wide bandgap (WBG) semiconductor materials have the capability of making power electronic components with a smaller size, faster switching speed, more reliability, and greater efficiency than their silicon-based counterparts. Real progress in the field of power electronics occurred when WBG devices came into use. Reportedly, among the various WBG semiconductors, gallium nitride (GaN) and silicon carbide (4 H-SiC) are perceived for the future of power electronics as excellent materials. The purpose of this chapter is to analyze some recent progress in WBG semiconductor power devices (e.g. diodes, MOSFETs, HEMTs, etc.). The emphasis is made on particularly important issues, such as SiC MOSFETs channel mobility, ohmic contacts in SiC devices, and the strategies for normally-off GaN HEMTs. An outline of the key challenges and a brief insight into the upcoming aspects of ultra-high-voltage SiC devices and GaN vertical devices has been provided in the end.

宽带隙 (WBG) 半导体材料能够制造出比硅基材料更小尺寸、更快开关速度、更高可靠性和更高效率的电力电子元件。当 WBG 器件投入使用时，电力电子领域才真正取得了进展。据报道，在各种 WBG 半导体中，氮化镓 (GaN) 和碳化硅 (4 H-SiC) 被认为是电力电子未来的优秀材料。本章的目的是分析 WBG 半导体功率器件（例如二极管、MOSFET、HEMT 等）的一些最新进展。重点放在特别重要的问题上，例如 SiC MOSFET 的沟道迁移率、SiC 器件中的欧姆接触以及常关 GaN HEMT 的策略。