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Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate
Silicon ( IF 2.8 ) Pub Date : 2021-09-13 , DOI: 10.1007/s12633-021-01322-x
Ramkumar Natarajan 1 , Eswaran Parthasarathy 1
Affiliation  

In this paper, electrical and microwave characteristics of Al0.1Ga0.9 N channel HEMTs was reported. The device performance were evaluated for conventional gate, field plate gate, and recessed floating field plate with Silicon nitride (SiN)/Hafnium oxide (HfO2) passivation. The recessed floating field plate HEMT with gate length LG = 0.8 μm, gate to drain distance LGD = 1 μm, and HfO2 (SiN) passivation HEMT reports peak drain current density (IDS) of 0.282(0.288) A/mm at VGS = 0 V, three terminal off-state breakdown voltage (VBR) of 677 (617) V, 6.38 Ω.mm of ON-resistance (RON), transconductance (gm,max) of 93(95) mS/mm, and FT/FMAX of 11.4/49 (12/22) GHz. The HfO2 (SiN) passivation device demonstrated the Johnson figure of merit (JFoM)) of 7.71 (7.404) THz.V and FMAX x VBR product of 33.173 (13.574) THz.V. The high JFoM along with high FMAX x VBR indicates the potential of the ultrawide bandgap AlGaN HEMTs for future power switching and high-power microwave applications. The breakdown voltage (VBR) of the floating field plate HEMT is improved 54 % from conventional HEMT and 31 % improvement from gate field plate HEMT.



中文翻译:

Al0.1Ga0.9 N沟道HEMT的击穿电压增强与嵌入式浮动场板

在本文中, 报道了 Al 0.1 Ga 0.9 N 沟道 HEMT 的电学和微波特性。针对传统栅极、场板栅极和具有氮化硅 (SiN)/氧化铪 (HfO 2 ) 钝化的凹陷浮置场板评估了器件性能。栅极长度 L G = 0.8 μm、栅漏距离 L GD = 1 μm 和 HfO 2 (SiN) 钝化 HEMT 报告的峰值漏电流密度 (I DS ) 为 0.282(0.288) A/mm在 V GS = 0 V 时,三端关断状态击穿电压 (V BR ) 为 677 (617) V,导通电阻 (R ON ) 为 6.38 Ω.mm),跨导 (g m,max ) 为 93(95) mS/mm,F T /F MAX为 11.4/49 (12/22) GHz。HfO 2 (SiN) 钝化装置展示了 7.71 (7.404) THz.V 的约翰逊品质因数 (JFoM)) 和 33.173 (13.574) THz.V 的 F MAX x V BR乘积。高 JFoM 以及高 F MAX x V BR表明超宽带隙 AlGaN HEMT 在未来功率开关和高功率微波应用中的潜力。浮置场板 HEMT的击穿电压 (V BR ) 比传统 HEMT 提高了 54%,比栅场板 HEMT 提高了 31%。

更新日期:2021-09-13
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