In this paper, electrical and microwave characteristics of Al_0.1Ga_0.9 N channel HEMTs was reported. The device performance were evaluated for conventional gate, field plate gate, and recessed floating field plate with Silicon nitride (SiN)/Hafnium oxide (HfO₂) passivation. The recessed floating field plate HEMT with gate length L_G = 0.8 μm, gate to drain distance L_GD = 1 μm, and HfO₂ (SiN) passivation HEMT reports peak drain current density (I_DS) of 0.282(0.288) A/mm at V_GS = 0 V, three terminal off-state breakdown voltage (V_BR) of 677 (617) V, 6.38 Ω.mm of ON-resistance (R_ON), transconductance (g_m,max) of 93(95) mS/mm, and F_T/F_MAX of 11.4/49 (12/22) GHz. The HfO₂ (SiN) passivation device demonstrated the Johnson figure of merit (JFoM)) of 7.71 (7.404) THz.V and F_MAX x V_BR product of 33.173 (13.574) THz.V. The high JFoM along with high F_MAX x V_BR indicates the potential of the ultrawide bandgap AlGaN HEMTs for future power switching and high-power microwave applications. The breakdown voltage (V_BR) of the floating field plate HEMT is improved 54 % from conventional HEMT and 31 % improvement from gate field plate HEMT.

在本文中， 报道了 Al _0.1 Ga _0.9 N 沟道 HEMT 的电学和微波特性。针对传统栅极、场板栅极和具有氮化硅 (SiN)/氧化铪 (HfO ₂ ) 钝化的凹陷浮置场板评估了器件性能。栅极长度 L _G = 0.8 μm、栅漏距离 L _GD = 1 μm 和 HfO ₂ (SiN) 钝化 HEMT 报告的峰值漏电流密度 (I _DS ) 为 0.282(0.288) A/mm在 V _GS = 0 V 时，三端关断状态击穿电压 (V _BR ) 为 677 (617) V，导通电阻 (R _ON ) 为 6.38 Ω.mm)，跨导 (g _m,max ) 为 93(95) mS/mm，F _T /F _MAX为 11.4/49 (12/22) GHz。HfO ₂ (SiN) 钝化装置展示了 7.71 (7.404) THz.V 的约翰逊品质因数 (JFoM)) 和 33.173 (13.574) THz.V 的 F _MAX x V _BR乘积。高 JFoM 以及高 F _MAX x V _BR表明超宽带隙 AlGaN HEMT 在未来功率开关和高功率微波应用中的潜力。浮置场板 HEMT的击穿电压 (V _BR ) 比传统 HEMT 提高了 54%，比栅场板 HEMT 提高了 31%。