Tunnel Field Effect Transistor can be introduced as an emerging alternate to MOSFET which is energy efficient and can be used in low power applications. Due to the challenge involved in integration of band to band tunneling generation rate, the existing drain current models are inaccurate. A compact analytical model for simple tunnel FET and pnpn tunnel FET is proposed which is highly accurate. The numerical integration of tunneling generation rate in the tunneling region is performed using Simpson’s rule. Integration is done using both Simpson’s 1/3 rule and 3/8 rule and the models are validated against numerical device simulations. The models are compared with existing models and it is observed that the proposed models show excellent agreement with device simulations in the entire region of operation with Simpson’s 3/8 rule exhibiting the maximum accuracy.

隧道场效应晶体管可以作为 MOSFET 的新兴替代品引入，它具有高能效且可用于低功率应用。由于带间隧穿发生率的集成所涉及的挑战，现有的漏极电流模型是不准确的。提出了一种高精度的简单隧道FET和pnpn隧道FET的紧凑解析模型。隧穿区中隧穿发生率的数值积分是使用辛普森规则进行的。积分是使用辛普森的 1/3 规则和 3/8 规则完成的，并且模型针对数字设备模拟进行了验证。