Halide Perovskites for Memristive Data Storage and Artificial Synapses,The Journal of Physical Chemistry Letters

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Halide Perovskites for Memristive Data Storage and Artificial Synapses
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2021-09-13 , DOI: 10.1021/acs.jpclett.1c02332
Kyung Ju Kwak ₁ , Da Eun Lee ₁ , Seung Ju Kim ₁ , Ho Won Jang _{1,

2}

Affiliation

Halide perovskites have been noted for their exotic properties such as fast ion migration, tunable composition, facile synthetic routes, and flexibility in addition to large light absorption coefficients, long carrier diffusion lengths, and high defect tolerance. These properties have made halide perovskites promising materials for memristors. Applications in the field of resistive switching memory devices and artificial synapses for neuromorphic computing are especially noteworthy. This Perspective covers state-of-the-art perovskite-based memristive devices. Moreover, the fundamental mechanisms and characteristics of perovskite-based memristors are elucidated. Interesting opportunities to improve the performance of perovskite-based memristors for commercialization are provided, including improving film uniformity and air stability, controlling the stoichiometry, finding new all-inorganic and lead-free halide perovskites, and making perovskites into single crystals or quantum dots. We expect our Perspective to be the foundation of realizing next-generation halide perovskite-based memristors.

中文翻译：

用于忆阻数据存储和人工突触的卤化物钙钛矿

除了大的光吸收系数、长的载流子扩散长度和高缺陷耐受性之外，卤化物钙钛矿还因其独特的特性而闻名，例如快速离子迁移、可调成分、简便的合成路线和灵活性。这些特性使卤化物钙钛矿成为用于忆阻器的有希望的材料。在用于神经形态计算的电阻开关存储设备和人工突触领域的应用尤其值得注意。该观点涵盖了最先进的基于钙钛矿的忆阻器件。此外，阐明了基于钙钛矿的忆阻器的基本机制和特性。提供了改善基于钙钛矿的忆阻器的商业化性能的有趣机会，包括改善薄膜均匀性和空气稳定性，控制化学计量，寻找新的全无机和无铅卤化物钙钛矿，并将钙钛矿制成单晶或量子点。我们希望我们的观点成为实现下一代基于卤化物钙钛矿的忆阻器的基础。

更新日期：2021-09-23

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