Engineering Three-Dimensional Moiré Flat Bands,Nano Letters

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Engineering Three-Dimensional Moiré Flat Bands
Nano Letters ( IF 9.6 ) Pub Date : 2021-09-13 , DOI: 10.1021/acs.nanolett.1c01684
Lede Xian _{1,

2} , Ammon Fischer ₃ , Martin Claassen ₄ , Jin Zhang ₂ , Angel Rubio _{2,

5,

6} , Dante M Kennes _{2,

3}

Affiliation

Twisting two adjacent layers of van der Waals materials with respect to each other can lead to flat two-dimensional electronic bands which enables a wealth of physical phenomena. Here, we generalize this concept of so-called moiré flat bands to engineer flat bands in all three spatial dimensions controlled by the twist angle. The basic concept is to stack the material such that the large spatial moiré interference patterns are spatially shifted from one twisted layer to the next. We exemplify the general concept by considering graphitic systems, boron nitride, and WSe₂, but the approach is applicable to any two-dimensional van der Waals material. For hexagonal boron nitride, we develop an ab initio fitted tight binding model that captures the corresponding three-dimensional low-energy electronic structure. We outline that interesting three-dimensional correlated phases of matter can be induced and controlled following this route, including quantum magnets and unconventional superconducting states.

中文翻译：

工程三维莫尔平带

将两层相邻的范德华材料相互扭转可以产生平坦的二维电子带，从而产生丰富的物理现象。在这里，我们概括了所谓的莫尔平带的概念，以在由扭转角控制的所有三个空间维度上设计平带。基本概念是将材料堆叠起来，使得大空间莫尔干涉图案在空间上从一个扭曲层移动到下一个。我们通过考虑石墨系统、氮化硼和WSe ₂来举例说明一般概念，但该方法适用于任何二维范德华材料。对于六方氮化硼，我们开发了一种从头算拟合的紧束缚模型，可以捕获相应的三维低能电子结构。我们概述了可以按照这条路线诱导和控制有趣的三维相关物质相，包括量子磁体和非常规超导态。

更新日期：2021-09-22

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