This work presents a complementary P–N class-C voltage-controlled power oscillator based on a new structure asymmetry inductor using a 130 nm CMOS process. The proposed asymmetry inductor is designed with different widths and various spaces between turns. This improves the quality factor (Q-factor) by 30.8% compared to the conventional inductor and also, shifts up self-resonance frequency (SRF) from 4.8 GHz to 7.8 GHz. In turns, the proposed inductor causes a 2 dB improvement in the phase noise of the oscillator. By using a single switching voltage the proposed voltage-controlled oscillator works in triple bands with a tuning range of 34.5% from 2 to 2.9 GHz, and low phase noise of −122 dBc/Hz @ 1-MHz offset frequency from 2.2 GHz carrier. The proposed VCO is class-C and draws 0.183 mA from 1 V supply voltage. The minimum achieved Figure-of-Merit (FOM) equals −195.5 dBc/Hz and the maximum given output power is 7 dBm. The active area of the proposed VCO equals$0.17\mathit{m}{\mathit{m}}^2$, while the total chip area including RF pads and output buffers is$0.56\mathit{m}{\mathit{m}}^2$.

这项工作提出了一种基于使用 130 nm CMOS 工艺的新型结构不对称电感器的互补 P-N C 类压控功率振荡器。所提出的不对称电感器设计为具有不同的宽度和匝间的各种间距。与传统电感器相比，这将品质因数（Q 因数）提高了 30.8%，并且还将自谐振频率 (SRF) 从 4.8 GHz 上移至 7.8 GHz。反过来，建议的电感器使振荡器的相位噪声提高了 2 dB。通过使用单个开关电压，建议的压控振荡器在三频段工作，调谐范围为 34.5%，从 2 到 2.9 GHz，低相位噪声 -122 dBc/Hz @ 2.2 GHz 载波的 1-MHz 偏移频率。建议的 VCO 为 C 类，从 1 V 电源电压消耗 0.183 mA。实现的最小品质因数 (FOM) 等于 −195.5 dBc/Hz，最大给定输出功率为 7 dBm。提议的 VCO 的有效面积等于$0.17\mathit{米}{\mathit{米}}^2$，而包括 RF 焊盘和输出缓冲器在内的总芯片面积为$0.56\mathit{米}{\mathit{米}}^2$.