The contact resistance as well as the mobility have developed to key performance indicators for benchmarking organic field-effect transistors. Typically, conventional methods for silicon transistors are employed for their extraction thereby ignoring the peculiarities of organic transistors. This work outlines the required conditions for using conventional extraction techniques for the contact resistance and the mobility based on TCAD simulations and experimental data. Our experimental data contain both staggered and coplanar structures fabricated by exploiting different optimization techniques like SAM treated electrodes, different shearing speeds, PS blending and silicon oxide functionalization. In addition, the work clarifies how injection limited current–voltage characteristics can affect high-performance organic field-effect transistors. Finally, we introduce a semi-physical model for the contact resistance to accurately interpret extracted benchmark parameters by means of the transfer length method (TLM). Guidelines to use conventional extraction techniques with special emphasis on TLM are also provided.

接触电阻和迁移率已发展成为基准有机场效应晶体管的关键性能指标。通常，采用硅晶体管的常规方法来提取它们，从而忽略了有机晶体管的特性。这项工作根据 TCAD 模拟和实验数据概述了使用传统提取技术获取接触电阻和迁移率所需的条件。我们的实验数据包含通过利用不同的优化技术（如 SAM 处理的电极、不同的剪切速度、PS 混合和氧化硅功能化）制造的交错和共面结构。此外，这项工作阐明了注入限制的电流-电压特性如何影响高性能有机场效应晶体管。最后，我们引入了接触电阻的半物理模型，以通过传输长度方法 (TLM) 准确解释提取的基准参数。还提供了使用特别强调 TLM 的传统提取技术的指南。