Understanding the behavior of dopant activation at low temperatures is necessary for three-dimensional integration of transistors. In this work, the impact of hydrogen coimplantation on boron activation was investigated at implantation doses below the amorphization threshold. The carrier depletion effect due to substrate doping was simulated to accurately characterize the initial activation behavior of boron. At temperatures higher than 400 °C, the boron activation level decreased as the hydrogen dose increased. The deactivation caused by hydrogen diminished after extended annealing at 500 °C. This indicated the passivation of boron by hydrogen. However, the boron activation in the sample implanted with hydrogen at a dose of 1 × 10¹⁵ cm⁻² was first degraded and then enhanced during annealing at 300 °C. The time-dependent activation behavior suggested the elimination of isolated defects via reactions associated with hydrogen migration.

了解低温下掺杂剂激活的行为对于晶体管的三维集成是必要的。在这项工作中，在低于非晶化阈值的注入剂量下研究了氢共注入对硼活化的影响。模拟由于衬底掺杂引起的载流子耗尽效应，以准确表征硼的初始激活行为。在高于 400 °C 的温度下，硼的活化水平随着氢剂量的增加而降低。在 500 °C 下延长退火后，由氢引起的失活减少了。这表明硼被氢钝化。然而，注入剂量为 1 × 10 ¹⁵  cm ^{-2 的}氢的样品中的硼活化在 300 °C 的退火过程中首先降解然后增强。与时间相关的活化行为表明通过与氢迁移相关的反应消除了孤立的缺陷。