Atmospheric Pressure Dry Etching of Polysilicon Layers for Highly Reverse Bias-Stable TOPCon Solar Cells,Solar RRL

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Atmospheric Pressure Dry Etching of Polysilicon Layers for Highly Reverse Bias-Stable TOPCon Solar Cells
Solar RRL ( IF 6.0 ) Pub Date : 2021-09-12 , DOI: 10.1002/solr.202100481
Bishal Kafle ₁ , Sebastian Mack ₁ , Christopher Teßmann ₁ , Sattar Bashardoust ₁ , Laurent Clochard ₂ , Edward Duffy ₂ , Andreas Wolf ₁ , Marc Hofmann ₁ , Jochen Rentsch ₁

Affiliation

Single-sided etching (SSE) of a-Si/poly-Si is typically considered a challenge for realizing a cost-efficient TOPCon production sequence, as there is a certain degree of unwanted wrap-around for poly-Si deposition technologies such as low pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, and atmospheric pressure chemical vapor deposition. To date, alkaline or acidic wet-chemical solutions in either inline or batch configurations are used for this purpose. Herein, an alternative SSE process is proposed using an inline dry etching tool, which applies molecular fluorine as the etching gas under atmospheric pressure conditions. The developed etching process performs complete etching of both as-deposited amorphous silicon and annealed polycrystalline silicon layers, either intrinsic or doped, and with measured etch rates of >3 μm min⁻¹ at 10% F₂ concentration allows etching of a typical layer thickness of 200 nm in just a few seconds. The etching process is also configured to perform excellent edge isolation while maintaining a low wrap-around etching (d _rear < 500 μm) at the opposing-side. The etching process is successfully transferred to the industrial TOPCon solar cell architecture, yielding high parallel resistances (S _shunt,avg. > 1500 kΩ cm²), low reverse current density (J _rev,avg < 0.8 mA cm⁻²) measured at a bias voltage of −12 V, and independently certified conversion efficiencies of up to 23.3%.

中文翻译：

用于高反向偏压稳定 TOPCon 太阳能电池的多晶硅层的常压干法蚀刻

a-Si/poly-Si 的单面蚀刻 (SSE) 通常被认为是实现具有成本效益的 TOPCon 生产序列的挑战，因为多晶硅沉积技术存在一定程度的不需要的环绕，例如低压力化学气相沉积、等离子体增强化学气相沉积和大气压化学气相沉积。迄今为止，在线或批量配置的碱性或酸性湿化学溶液都用于此目的。在此，提出了一种使用在线干法蚀刻工具的替代 SSE 工艺，该工具在大气压条件下使用分子氟作为蚀刻气体。开发的蚀刻工艺对沉积的非晶硅和退火的多晶硅层进行完全蚀刻，无论是本征的还是掺杂的，^-1在 10% F ₂浓度下允许在几秒钟内蚀刻 200 nm 的典型层厚度。蚀刻工艺还配置为执行出色的边缘隔离，同时在相对侧保持低环绕蚀刻（d _{背面< 500 μm）。}_{蚀刻工艺成功地}^转移到工业TOPCon太阳能电池架构^中_，在-12 V 的偏置电压，以及高达 23.3% 的独立认证转换效率。

更新日期：2021-09-12

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